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NTTFS4945N 데이터시트 PDF




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부품번호 NTTFS4945N 기능
기능 Power MOSFET ( Transistor )
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NTTFS4945N 데이터시트, 핀배열, 회로
NTTFS4945N
Power MOSFET
30 V, 34 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Power Load Switch
Notebook Battery Management
Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
DraintoSource Voltage
VDSS
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 85°C
VGS
ID
Power Dissipation
(Note 1)
RqJA
TA = 25°C
PD
Value
30
±20
11.2
8.0
2.16
Unit
V
V
A
W
Continuous Drain
Current RqJA 10 s
(Note 1)
TA = 25°C
TA = 85°C
ID
15.7 A
11.3
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
www.DataRSqhJeAe(t4NUo.teco2m)
Continuous Drain
Current RqJC (Note 1)
TA = 25°C
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.30
7.1
5.1
0.89
34
24.4
20
102
65
55 to
+150
20
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy EAS 26.5 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 23 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
9.0 mW @ 10 V
13 mW @ 4.5 V
ID MAX
34 A
NChannel MOSFET
D (58)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4945 D
S AYWWG D
GGD
4945
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4945NTAG WDFN8 1500/Tape & Reel
(PbFree)
NTTFS4945NTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 1
1
Publication Order Number:
NTTFS4945N/D




NTTFS4945N pdf, 반도체, 판매, 대치품
NTTFS4945N
TYPICAL CHARACTERISTICS
50
VGS = 10 V
3.6 V
40
4.5 V
TJ = 25°C
4 V 3.4 V
30
3.2 V
20
3.0 V
10 2.8 V
2.6 V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
48
44 VDS 10 V
40
36
32
28
24
20
16
TJ = 25°C
12
8
4
0
TJ = 125°C
TJ = 55°C
0.5 1 1.5 2 2.5 3 3.5
4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4.5
0.060
0.050
0.040
0.030
ID = 20 A
TJ = 25°C
0.016
0.014 TJ = 25°C
0.012
0.010
0.008
VGS = 4.5 V
0.020
0.010
0.006
0.004
0.002
VGS = 10 V
0.000
0.000
2 3 4 5 6 7 8 9 10
10 20 30 40 50 60 70 80
VGS (V)
ID, DRAIN CURRENT (A)
w
w
w Fig. ure 3. ODnResisatance vst. VGS a
S
Fihgure 4. Oe nResGiseattaenVcoelvtatsg. eDrain4CurrentUand
.
c
2.0
ID = 20 A
1.8 VGS = 10 V
1.6
1.4
10000
VGS = 0 V
1000
TJ = 150°C
TJ = 125°C
1.2
100
1 TJ = 85°C
0.8
0.6
50
25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
10
5 10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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4

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NTTFS4945N 전자부품, 판매, 대치품
NTTFS4945N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB01
ISSUE B
2X
0.20 C
D
D1
87 65
A
B
2X
0.20 C
E1 E
1 2 34
TOP VIEW
c
0.10 C
0.10 C
A
SIDE VIEW DETAIL A
8X b
0.10 C A B
0.05 c L
1
e/2
4
K
E2 M
G
85
D2
L1
BOTTOM VIEW
6X
e
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
4X
q
A1
C
SEATING
PLANE
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00
−−− 0.05 0.000
−−− 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC
0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC
0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
e 0.65 BSC
0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.64 −−− −−− 0.025 −−− −−−
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q
0 _ −−− 12 _
0 _ −−− 12 _
SOLDERING FOOTPRINT*
8X
0.42
PACKAGE
OUTLINE
0.65
PITCH
4X
0.66
0.75 0.57
3.60
2.30
www.DataSheet4U.com
0.47 2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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부품번호상세설명 및 기능제조사
NTTFS4945N

Power MOSFET ( Transistor )

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ON Semiconductor

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