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Número de pieza | STD7NM50N-1 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STD7NM50N-1 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! STD7NM50N - STD7NM50N-1
STF7NM50N - STP7NM50N
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STD7NM50N
STD7NM50N-1
STF7NM50N
STP7NM50N
550V
550V
550V
550V
<0.78Ω
<0.78Ω
<0.78Ω
<0.78Ω
5A
5A
5A (1)
5A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This device is realized with the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
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Application
■ Switching application
3
2
1
TO-220
IPAK
3
2
1
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD7NM50N-1
STD7NM50N
STF7NM50N
STP7NM50N
Marking
D7NM50N
D7NM50N
F7NM50N
P7NM50N
Package
IPAK
DPAK
TO-220FP
TO-220
Packaging
Tube
Tape & reel
Tube
Tube
April 2007
Rev 1
1/17
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17
1 page STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 250V, ID = 2.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
Min Typ Max Unit
7 ns
5 ns
40 ns
9 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5A, VGS = 0
ISD =5A, di/dt =100A/µs,
VDD=100V, Tj=25°C
(see Figure 17)
ISD =5A, di/dt =100A/µs,
VDD=100V, Tj=150°C
(see Figure 17)
5
20
1.3
250
2
13
330
2
13
A
A
V
ns
µC
A
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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5/17
5 Page STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
e 2.40
e1 4.95
10.40
2.70
5.15
0.393
0.094
0.194
0.409
0.106
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
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11/17
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet STD7NM50N-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD7NM50N-1 | N-channel Power MOSFET | STMicroelectronics |
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