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PDF STD7NM60N Data sheet ( Hoja de datos )
| Número de pieza | STD7NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK
second generation MDmesh™ Power MOSFET
Preliminary data
Features
Type
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.9 Ω
ID
4.7 A
Pw
45 W
20 W
45 W
45 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This second generation of MDmesh™ technology,
applies the benefits of the multiple drain process
to STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
www.DataShhigeeht4dUv.c/domt capability and excellent avalanche
characteristics.
IPAK
3
2
1
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
Marking
7NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
October 2009
Doc ID 16472 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14
1 page  
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 2.3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 4)
Min. Typ. Max Unit
TBD
ns
TBD
ns
--
TBD
ns
TBD
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.7 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.7 A, di/dt = 100 A/µs
VDD = 20 V (see Figure 7)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.7 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 150 °C
(see Figure 7)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
TBD
TBD
TBD
TBD
TBD
TBD
4.7
18.8
TBD
A
A
V
ns
nC
A
ns
nC
A
www.DataSheet4U.com
Doc ID 16472 Rev 1
5/14
5 Page 
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min Typ
A 4.40
b 0.61
b1 1.14
c 0.48
D 15.25
D1 1.27
E 10
e 2.40
e1 4.95
F 1.23
H1 6.20
J1 2.40
L 13
L1 3.50
L20 16.40
L30 28.90
∅P 3.75
Q 2.65
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
www.DataSheet4U.com
Doc ID 16472 Rev 1
0015988_Rev_S
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STD7NM60N.PDF ] | |
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