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부품번호 | STU7NM60N 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 14 페이지수
STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK
second generation MDmesh™ Power MOSFET
Preliminary data
Features
Type
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.9 Ω
ID
4.7 A
Pw
45 W
20 W
45 W
45 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This second generation of MDmesh™ technology,
applies the benefits of the multiple drain process
to STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
www.DataShhigeeht4dUv.c/domt capability and excellent avalanche
characteristics.
IPAK
3
2
1
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
Marking
7NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
October 2009
Doc ID 16472 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.3 A
Min. Typ. Max. Unit
600 V
1 µA
100 µA
±100 nA
2 3 4V
0.9 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
350 pF
- 30 - pF
1 pF
www.DataSheet4U.com
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 480 V, VGS = 0
- TBD - pF
- TBD - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 9 -Ω
Qg Total gate charge
VDD = 480 V, ID = 4.7 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 3)
12 nC
- TBD - nC
TBD
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/14 Doc ID 16472 Rev 1
4페이지 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
www.DataSheet4U.com
Doc ID 16472 Rev 1
7/14
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STU7NM60N | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |