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T1P3002028-SP 데이터시트 PDF




TriQuint Semiconductor에서 제조한 전자 부품 T1P3002028-SP은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 T1P3002028-SP 기능
기능 PowerbandTM pHEMT RF Power Transistor
제조업체 TriQuint Semiconductor
로고 TriQuint Semiconductor 로고


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T1P3002028-SP 데이터시트, 핀배열, 회로
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Introduction
The T1P3002028-SP is a POWERBANDTM discrete pHEMT,
depletion mode, RF Power transistor designed to operate from
500MHz to 2GHz in wide-band circuits. The device has an in-
stantaneous band-width P1dB output power of 20watts across
the entire band when operated in the TriQuint wide-band test
xture. The T1P3002028-SP can also be used in narrow band ap-
plications and is rated at 26Watts P1dB at 2GHz.
Figure 1. Available Packages
— Narrow Band up to 2GHz
— 12dB gain
— 58% eciency
— 26Watt P1dB
Table 1. Maximum Ratings
Sym Parameter
V+ Positive Supply Voltage
V- Negative Supply Voltage Range
l+ Positive Supply Current
| lG |
PD
TCH
Gate Supply Current
Power Dissipation
Operating Channel Temperature
Value
28 V
–5V to 0V
5.6A
70 mA
See note 3
150o C
Notes
2/
2/
2/ 3/
4/
www.DataSheet4U.com
Features
— Pulse Characterization
— Exceptional Instantaneous band-width performance from
500MHz – 2GHz
— Increased eciency results in signicant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumption
— Typical Performance ratings
— Wide-Band 500MHz-2GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Eciency
— 20Watt P1dB
1/ These ratings represent the maximum operable values for this
device.
2/ Combinations of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited
to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)
4/ Junction operating temperature will directly aect the device
median time to failure(TM). For maximum life, it is recom-
mended that junction temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Information
Parameter
Test Conditions TCH θJC TM
(°C) (°C/W) (HRS)
θJC Thermal Resis- Vd = 10 V
tance (channel to Idq = 900 mA
backside of carrier) Pdiss = 9 W
145 8.3 1.6E+6
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband




T1P3002028-SP pdf, 반도체, 판매, 대치품
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 3. P1dB & Gain (Narrow Band Performance Plotted over Frequency)
100 24
90 22
Vdd = 28 V, Idq = 240 mA
80 20
Pulse Conditions: 100 us, 10%
70 18
60 16
50 14
40 12
30 10
20 8
10 6
00.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.54
www.DataSheet4U.com
Frequency [GHz]
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband

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T1P3002028-SP 전자부품, 판매, 대치품
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Package Dimensions
Note: All dimensions in inches. Scale 8:1
.320
.090
2
.351
.040
www.DataSheet4U.com
.360
.087 .350
45° X .085
.063
.006
.090
4
1
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband

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관련 데이터시트

부품번호상세설명 및 기능제조사
T1P3002028-SP

PowerbandTM pHEMT RF Power Transistor

TriQuint Semiconductor
TriQuint Semiconductor

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