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PDF LY6251216 Data sheet ( Hoja de datos )
| Número de pieza | LY6251216 | |
| Descripción | 512K X 16 BIT LOW POWER CMOS SRAM | |
| Fabricantes | Lyontek | |
| Logotipo |  |
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®
Rev. 0.4
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Description
Initial Issue
Added ISB Spec.
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised VDR
Issue Date
Oct.14.2007
Feb.1.2008
May.20.2009
Sep.11.2009
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
1 page  
®
Rev. 0.4
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tBHZ*
tBLZ*
LY6251216-55
MIN.
MAX.
55 -
- 55
- 55
- 30
10 -
5-
- 20
- 20
10 -
- 55
- 25
10 -
LY6251216-70
MIN.
MAX.
70 -
- 70
- 70
- 35
10 -
5-
- 25
- 25
10 -
- 70
- 30
10 -
(2) WRITE CYCLE
PARAMETER
SYM.
LY6251216-55
MIN.
MAX.
Write Cycle Time
tWC 55
-
Address Valid to End of Write
www.DaCtahSihpeeEt4nUa.bcolemto End of Write
tAW
tCW
50
50
-
-
Address Set-up Time
tAS 0 -
Write Pulse Width
tWP 45
-
Write Recovery Time
tWR 0
-
Data to Write Time Overlap
tDW 25
-
Data Hold from End of Write Time tDH 0 -
Output Active from End of Write
tOW*
5
-
Write to Output in High-Z
tWHZ*
-
20
LB#, UB# Valid to End of Write
tBW
45
-
*These parameters are guaranteed by device characterization, but not production tested.
LY6251216-70
MIN.
MAX.
70 -
60 -
60 -
0-
55 -
0-
30 -
0-
5-
- 25
60 -
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
5 Page 
®
Rev. 0.4
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet LY6251216.PDF ] | |
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