PDF LY61L616 Data sheet ( Hoja de datos )

Número de pieza	LY61L616
Descripción	64K X 16 BIT HIGH SPEED CMOS SRAM
Fabricantes	Lyontek
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No Preview Available ! ® Rev. 1.8 LY61L6416 64K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Initial Issue Deleted Icc1 Spec. Revised Truth Table Deleted Data Retention Waveform(2)(UB & LB controlled) Revised the typo in Page 1 Added PKG Type : 48-ball 6mm x 8mm TFBGA Revised Test Condition of ISB1/IDR Added I Grade Spec. Revised VTERM to VT1 and VT2 Added -20ns Spec. Added LL Spec. Revised Test Condition of ISB Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Jul.25.2004 Sep.21.2004 Jun.20.2005 Feb.13.2006 Jun.13.2007 Feb.4.2008 Mar.31.2008 Aug.7.2008 Apr.17.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 1 page ® Rev. 1.8 LY61L6416 64K X 16 BIT HIGH SPEED CMOS SRAM TRUTH TABLE MODE CE# OE# WE# LB# Standby HX Output Disable LH LH LL Read LL LL LX Write LX LX Note: H = VIH, L = VIL, X = Don't care. XX HL HX HL HH HL LL LH LL UB# X X L H L L H L L I/O OPERATION DQ0-DQ7 DQ8-DQ15 High – Z High – Z High – Z High – Z DOUT High – Z DOUT DIN High – Z DIN High – Z High – Z High – Z DOUT DOUT High – Z DIN DIN SUPPLY CURRENT ISB,ISB1 ICC ICC ICC DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION Supply Voltage VCC -8/-10 -12/-15/-20 Input High Voltage Input Low Voltage VIH1 VIL2 Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage Current ILO VCC ≧ VOUT ≧ VSS, Output Disabled Output High Voltage VOH IOH = -4mA Output Low Voltage VOL IOL = 8mA -8 Average Operating www.DaPtaoSwheeert4sUu.pcopmly Current Cycle time = Min. ICC CE# = VIL , II/O = 0mA Other pins at VIH or VIL -10 -12 -15 -20 Standby Power Supply Current ISB CE# = VIH, other pins at VIH or VIL ISB1 CE# ≧VCC - 0.2V 8/10/12/15/20 Others at 0.2V or VCC - 0.2V 20LL Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP.) and TA = 25℃ 5. 1mA for special request 6. 50µA for special request MIN. 3.15 3.0 2.0 - 0.3 -1 -1 2.4 - - - - - - - - - TYP. 4 MAX. UNIT 3.3 3.6 V 3.3 3.6 V - VCC+0.3 V - 0.8 V - 1 µA - 1 µA - -V - 0.4 V 115 150 mA 105 120 mA 95 100 mA 85 90 mA 70 75 mA 3 10 mA 0.6 35 mA 20 100*6 µA CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER SYMBOL MIN. Input Capacitance CIN - Input/Output Capacitance CI/O - Note : These parameters are guaranteed by device characterization, but not production tested. MAX 6 8 UNIT pF pF Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 5 Page ® Rev. 1.8 LY61L6416 64K X 16 BIT HIGH SPEED CMOS SRAM PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP-Ⅱ Package Outline Dimension www.DataSheet4U.comSYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. - - 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 - 0.45 0.12 - 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 - 0.800 - 0.40 0.50 0.60 - 0.805 - - - 0.076 0o 3o 6o DIMENSIONS IN MILS MIN. NOM. MAX. - - 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 - 17.7 4.7 - 8.3 717 725 733 453 463 473 392 400 408 - 31.5 - 15.7 19.7 23.6 - 31.7 - - -3 0o 3o 6o Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 11 Page

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