|
|
|
부품번호 | LY61L2568 기능 |
|
|
기능 | 256K X 8 BIT HIGH SPEED CMOS SRAM | ||
제조업체 | Lyontek | ||
로고 | |||
®
Rev. 0.4
LY61L2568
256K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Description
Preliminary
Deleted ISB Spec.
Deleted -10/-12/-15 Spec.
Revised Test Condition of ICC/ISB1/IDR
Revised VTERM to VT1 and VT2
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added packing type in ORDERING INFORMATION
Issue Date
Apr.19.2006
May.24.2006
Mar.13.2007
Apr.17.2009
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
Rev. 0.4
LY61L2568
256K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VCC relative to VSS
VT1 -0.5 to 4.6
V
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
VT2
TA
TSTG
-0.5 to VCC+0.5
0 to 70(C grade)
-65 to 150
V
℃
℃
Power Dissipation
PD 1 W
DC Output Current
IOUT 50 mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
Standby
H
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
Supply Voltage
Input High Voltage
Input Low Voltage
www.DaItnapShueteLt4eUa.kcoamge Current
VCC
VIH*1
VIL*2
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
Current
ILO
VCC ≧ VOUT ≧ VSS,
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Average Operating
Power supply Current
Cycle time = Min.
ICC CE# = VIL , II/O = 0mA
Others at VIL or VIH
20
25
20LL
25LL
Standby Power
Supply Current
ISB1
CE# ≧VCC - 0.2V
Normal
Others at 0.2V or VCC - 0.2V 20/25LL
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
5. 1mA for special request
6. 20µA for special request
MIN.
3.0
2.2
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
TYP. *4 MAX.
3.3 3.6
- VCC+0.3
- 0.6
-1
UNIT
V
V
V
µA
- 1 µA
- -V
- 0.4 V
110 150 mA
90 115 mA
40 50 mA
35 45 mA
0.5 5*5 mA
10 50*6 µA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
4페이지 ®
Rev. 0.4
LY61L2568
256K X 8 BIT HIGH SPEED CMOS SRAM
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Address
CE#
WE#
Dout
tWC
tAW
tCW
tAS tWP
tWHZ
(4)
Din
tWR
High-Z
TOW
tDW tDH
Data Valid
(4)
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
Address
CE#
www.DataSheet4U.com
WE#
Dout
tAS
tWHZ
(4)
tWC
tAW
tCW
tWP
Din
tWR
High-Z
tDW tDH
Data Valid
Notes :
1.WE#, CE# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ LY61L2568.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LY61L256 | 32K X 8 BIT HIGH SPEED CMOS SRAM | Lyontek |
LY61L25616 | 256K X 16 BIT HIGH SPEED CMOS SRAM | Lyontek |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |