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부품번호 | STP14NM50N 기능 |
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기능 | Power MOSFETs | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 15 페이지수
STB14NM50N, STD14NM50N
STF14NM50N, STP14NM50N
N-channel 500 V, 0.246 Ω, 12 A MDmesh™ II Power MOSFET
in DPAK, D2PAK, TO-220 and TO-220FP
Preliminary data
Features
Type
STB14NM50N
STD14NM50N
STF14NM50N
STP14NM50N
VDSS @
TJmax
RDS(on)
max
ID
550 V < 0.29 Ω 12 A
■ 100% avalanche tested
■ Low input capacitances and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This second generation of MDmesh™ technology,
applies the benefits of the multiple drain process
to STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
www.DataShhigeeht4dUv.c/domt capability and excellent avalanche
characteristics.
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB14NM50N
STD14NM50N
STF14NM50N
STP14NM50N
Marking
14NM50N
Package
D2PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
December 2009
Doc ID 16832 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
15
Electrical characteristics
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
resistance
VGS = 10 V, ID = 6 A
Min. Typ. Max. Unit
500 V
1 µA
10 µA
0.1 µA
2 3 4V
0.246 0.29 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
790 pF
- 60 - pF
3 pF
www.DataSheet4U.com
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 50 V, VGS = 0
- TBD - pF
- TBD - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 4.7 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD =400 V, ID =12 A,
VGS =10 V (see Figure 3)
42 nC
- 7.4 - nC
23 nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/15 Doc ID 16832 Rev 2
4페이지 STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
www.DataSheet4U.com
Doc ID 16832 Rev 2
7/15
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부품번호 | 상세설명 및 기능 | 제조사 |
STP14NM50N | Power MOSFETs | ST Microelectronics |
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