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PDF STU8N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STU8N65M5 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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STB8N65M5, STD8N65M5, STF8N65M5,
STI8N65M5, STP8N65M5, STU8N65M5
N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages
Datasheet — production data
Features
Type
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
VDSS @ RDS(on)
TJmax max.
ID
710 V < 0.6 Ω 7 A
PTOT
70 W
70 W
25 W
70 W
70 W
70 W
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Applications
■ Switching applications
3
2
1
TO-220FP
TAB
3
1
DPAK
TAB
3
2
1
TO-220
TAB
123
I²PAK
TAB
3
1
D²PAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1. Device summary
Order codes Marking Package Packaging
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
8N65M5
D²PAK
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Tape and reel
Tape and reel
Tube
Tube
Tube
Tube
October 2012
This is information on a product in full production.
Doc ID 16531 Rev 5
1/26
www.st.com
26
1 page  
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(off)
tr(V)
tc(off)
tf(i)
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
VDD = 400 V, ID = 4A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
(see Figure 23)
Min. Typ. Max. Unit
50 ns
14 ns
--
20 ns
11 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
7A
-
28 A
- 1.5 V
200
- 1.6
16
ns
µC
A
263
- 1.9
15
ns
µC
A
Doc ID 16531 Rev 5
5/26
5 Page 
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical
Table 8. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 16531 Rev 5
11/26
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet STU8N65M5.PDF ] | |
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