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Datasheet 32NAB125T12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 32NAB125T12 | SKIIP32NAB125T12 SKiiP 32 NAB 12 Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40 120 / 80 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V
Theatsink = 25 / 80 °C tp < 1 ms; Th |  Semikron International | data |
32N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 32N50 | N-Channel Enhancement Mode MFET HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 30N50 IXFH/IXFT 32N50
V DSS
500 V 500 V
I
D25
30 A 32 A
R DS(on)
0.16 W 0.15 W
trr £ 250 ns
Symbol
Test Conditions
VDSS VDGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
VGS V
GSM
C  IXYS data | | |
| 2 | 32N50Q | IXFR32N50Q
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50  IXYS Corporation data | | |
| 3 | 32NAB125T12 | SKIIP32NAB125T12 SKiiP 32 NAB 12 Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40 120 / 80 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V
Theatsink = 25 / 80 °C tp < 1 ms; Th Semikron International data | |
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| Número de pieza | Descripción | Fabricantes | |
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