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BLD6G22L-50 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BLD6G22L-50은 전자 산업 및 응용 분야에서
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부품번호 BLD6G22L-50 기능
기능 W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
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BLD6G22L-50 데이터시트, 핀배열, 회로
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty
transistor
Rev. 01 — 15 December 2009
Objective data sheet
1. Product profile
1.1 General description
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using
NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA
base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak
device, input splitter and output combiner are integrated in a single package. This
package consists of one gate and drain lead and two extra leads of which one is used for
biasing the peak amplifier and the other is not connected. It only requires the proper
input/output match and bias setting as with a normal class-AB transistor.
Table 1. Typical performance
RF performance at Th = 25 °C.
Mode of operation
f
(MHz)
W-CDMA [1][2]
2110 to 2170
VDS PL(AV)
(V) (W)
28 8
Gp
(dB)
13.3
ηD
(%)
38
ACPR
(dBc)
30
PL(3dB)
(W)
52
[1] Test signal: 2-carrier W-CDMA; test model 1; 64 DPCH; PAR = 8.3 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] IDq = 170 mA (main); VGS(amp)peak = 0 V.
CAUTION
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This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz:
‹ Average output power = 8 W
‹ Power gain = 13.3 dB
‹ Efficiency = 38 %
„ Fully optimized integrated Doherty concept:
‹ integrated asymmetrical power splitter at input
‹ integrated power combiner
‹ peak biasing down to 0 V
‹ low junction temperature
‹ high efficiency




BLD6G22L-50 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
7. Characteristics
Table 6. Characteristics
Valid for both main and peak device.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
VGSq gate-source quiescent voltage
IDSS drain leakage current
IDSX drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 0.62 mA
VDS = 10 V; ID = 31 mA
VDS = 28 V; ID = 170 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 1.55 A
VGS = VGS(th) + 3.75 V;
ID = 1.085 A
Min Typ Max
65 - -
1.4 1.8 2.4
1.55 2.05 2.55
- - 1.4
4.6 5.1 -
Unit
V
V
V
μA
A
- - 140 nA
1.4 2.2 -
S
- 0.52 0.736 Ω
8. Application information
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Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 8.3 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz; f = 2140 MHz; RF performance at VDS = 28 V; IDq = 170 mA;
VGS(amp)peak = 0 V; Tcase = 25 °C; unless otherwise specified; in a production circuit.
Symbol Parameter
Conditions
Min Typ Max
PL(AV)
Gp
ηD
PARO
RLin
ACPR
average output power
power gain
drain efficiency
output peak-to-average ratio
input return loss
adjacent channel power ratio
PL(AV) = <tbd>
PL(AV) = <tbd>
PL(AV) = <tbd>
PL(AV) = <tbd>
PL(AV) = <tbd>
- 8-
<tbd> 13.3 -
<tbd> 38 -
<tbd> 7.6 -
<tbd> 20 -
- 30 <tbd>
Unit
W
dB
%
dB
dB
dBc
8.1 Ruggedness in Doherty operation
The BLD6G22L-50 and BLD6G22LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 170 mA; PL = 8 W (W-CDMA); f = 2140 MHz.
BLD6G22L-50_BLD6G22LS-50_1
Objective data sheet
Rev. 01 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
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BLD6G22L-50 전자부품, 판매, 대치품
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
15
Gp
(dB)
13
11
001aal146
(1)
(2)
(3)
60
ηD
(%)
40
20
001aal147
(3)
(2)
(1)
9
30 36 42 48
PL (dBm)
0
30 36 42 48
PL (dBm)
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 °C;
VGS(amp)peak = 0 V; δ = 10 %; tp = 100 μs on 1 ms period.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 5. Power gain as a function of load power;
typical values
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 °C;
VGS(amp)peak = 0 V; δ = 10 %; tp = 100 μs on 1 ms period.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 6. Drain efficiency as a function of load power;
typical values
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50
RLin
(dB)
40
001aal148
30
(1)
(2)
(3)
20
10
0
30 36 42 48
PL (dBm)
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 °C; VGS(amp)peak = 0 V; δ = 10 %; tp = 100 μs on
1 ms period.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 7. Input return loss as a function of load power; typical values
BLD6G22L-50_BLD6G22LS-50_1
Objective data sheet
Rev. 01 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
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부품번호상세설명 및 기능제조사
BLD6G22L-50

W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor

NXP Semiconductors
NXP Semiconductors

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