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PDF MMDT1N434 Data sheet ( Hoja de datos )
| Número de pieza | MMDT1N434 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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MMDT1N434
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Base
(Input)
R1
R2
Collector
(Output)
Emitter
(Common)
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
www.DataSahteVetC4EU=.co5mV, IC = 5 mA
Collector Base Cutoff Current
at VCB = 50 V
Collector Emitter Breakdown Voltage
at IC = 100 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
Input On Voltage
at VCE = 0.2 V, IC = 5 mA
Input Off Voltage
at VCE = 5 V, IC = 100 µA
Input Resistor
Input Resistor
Resistance Ratio
Transition Frequency
at VCE = 10 V, -IE = 5 mA, f = 100 MHz
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
50
50
6
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Symbol
hFE
ICBO
V(BR)CEO
VCE(sat)
VI(on)
VI(off)
R1
R2
R2 / R1
fT
Min.
50
-
50
-
-
0.5
3.29
15.4
3.6
-
Typ.
-
-
-
-
-
-
4.7
22
4.5
250
Max.
-
0.1
-
0.3
1.7
-
6.11
28.6
5.5
-
Unit
-
µA
V
V
V
V
KΩ
KΩ
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/01/2008
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMDT1N434.PDF ] | |
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