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부품번호 | R2J20651ANP 기능 |
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기능 | Integrated Driver | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 18 페이지수
Preliminary
R2J20651ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1792-0100
Rev.1.00
Jun 03, 2009
Description
The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Features
• Compliant with Intel 6 × 6 DrMOS specification
• Built-in power MOS FET suitable for applications with 5 V/12 V input
• Built-in driver circuit which matches the power MOS FET
• Built-in tri-state input function which can support a number of PWM controllers
• VIN operating-voltage range: 16 V max
• High-frequency operation (above 1 MHz) possible
• Large average output current (Max. 35 A)
• Achieve low power dissipation
• Controllable driver: Remote on/off
• Low-side MOS FET disabled function for DCM operation
• Built-in thermal warning
• Built-in Schottky diode for bootstrapping
• Small package: QFN40 (6 mm × 6 mm × 0.95 mm)
• Terminal Pb-free/Halogen-free
Outline
www.DataSheet4U.com
THWN
DISBL#
LSDBL#
PWM
VCIN BOOT
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
GH VIN
1
40
Driver
Pad
10
High-side
MOS Pad
11
MOS FET Driver
VSWH
Low-side MOS Pad
CGND VDRV
GL PGND
31
30
(Bottom view)
20
21
REJ03G1792-0100 Rev.1.00 Jun 03, 2009
Page 1 of 17
R2J20651ANP
Absolute Maximum Ratings
Item
Symbol
Rating
Power dissipation
Pt(25)
25
Pt(110)
8
Average output current
Iout
35
Input voltage
VIN (DC)
–0.3 to +16
VIN (AC)
20
Supply voltage & Drive voltage
VCIN & VDRV
–0.3 to +6
Switch node voltage
VSWH (DC)
16
VSWH (AC)
25
BOOT voltage
VBOOT (DC)
22
VBOOT (AC)
25
I/O voltage
Vpwm, Vdisble,
–0.3 to VCIN + 0.3
Vlsdbl, Vthwn
Operating junction temperature
Tj-opr
–40 to +150
Storage temperature
Tstg
–55 to +150
Notes: 1. Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110°C.
2. Rated voltages are relative to voltages on the CGND and PGND pins.
3. The specification values indicated "AC" are limited within 100 ns.
4. VCIN + 0.3 V < 6 V
Preliminary
Units
W
(Ta = 25°C)
Note
1
A
V2
2, 3
V2
V2
2, 3
V2
2, 3
V 2, 4
°C
°C
www.DataSheet4U.com
Safe Operating Area
45
40
35
30
25
Condition
20 VOUT = 1.3 V
15
VIN = 12 V
VCIN = 5 V
10 VDRV = 5 V
5
L = 0.45 μH
Fsw = 1 MHz
0
0 25 50
75 100 125 150 175
PCB Temperature (°C)
Recommended Operating Condition
Item
Input voltage
Supply voltage & Drive voltage
Symbol
VIN
VCIN & VDRV
Rating
4.5 to 14
4.5 to 5.5
Units
V
V
Note
REJ03G1792-0100 Rev.1.00 Jun 03, 2009
Page 4 of 17
4페이지 R2J20651ANP
Typical Application
(1) 12 V Input Power
+12 V
+5 V
PWM1
PWM
Control
Circuit
PWM2
PWM3
PWM4
www.DataSheet4U.com
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20651A VSWH
NP
LSDBL#
PWM
CGND
PGND
GL
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20651A VSWH
NP
LSDBL#
PWM
CGND
PGND
GL
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20651A VSWH
NP
LSDBL#
PWM
CGND
PGND
GL
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20651A VSWH
NP
LSDBL#
PWM
CGND
PGND
GL
REJ03G1792-0100 Rev.1.00 Jun 03, 2009
Page 7 of 17
Preliminary
+1.3 V
Power GND Signal GND
7페이지 | |||
구 성 | 총 18 페이지수 | ||
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R2J20651ANP | Integrated Driver | Renesas Technology |
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