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PDF TPC8025 Data sheet ( Hoja de datos )
| Número de pieza | TPC8025 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPC8025 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPC8025
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8025
Lithium-Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 26 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
www.DataShAeveatl4aUnc.choemcurrent
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
11
44
1.9
1.0
31
11
0.053
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
1 page  
RDS (ON) – Ta
25 Common source
Pulse test
20
15
10 VGS = 4.5 V
5 VGS = 10 V
ID = 5.5,11 A
2.8
ID = 2.8,5.5,11 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8025
IDR – VDS
100
10
4.5 3
10
1 VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2 −0.4
−0.6 −0.8
−1.0 −1.2
Drain−source voltage VDS (V)
10000
1000
100
Capacitance – VDS
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
10
0.1 1 10
www.DataSheet4U.com Drain−source voltage VDS
(V)
100
Vth – Ta
2.5
2
1.5
1
0.5 Common source
VDS = 10 V
ID = 1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
3
2.5
2 (1)
PD – Ta
(1)Device mounted on a glass-epoxyboard
(a)(Note 2a)
(2)Device mounted on a glass-epoxyboard
(b)(Note 2b)
t = 10 s
1.5
(2)
1
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
20
ID = 11 A
Ta = 25°C
40
Pulse test
16
30
VDS
20
12
12
6 VDD = 24 V
8
10 4
00
0 10 20 30 40
Total gate charge Qg (nC)
5 2009-09-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8025.PDF ] | |
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