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Número de pieza | TPC8029 | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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No Preview Available ! TPC8029
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8029
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 40 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
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Avalanche current
(Note 3)
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
18
72
1.9
1.0
84
18
0.053
150
−55 to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
1 page RDS (ON) – Ta
10
Common source
Pulse test
8
ID = 4.5,9,18 A
6
VGS = 4.5 V
4
ID = 4.5,9,18 A
2 VGS = 10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8029
1000
100
10
1
10
4.5
IDR – VDS
Common source
Ta = 25°C
Pulse test
3
1
VGS = 0 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
0.1
1
Crss
10
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(V)
100
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxyboard
(a)(Note 2a)
(2)Device mounted on a glass-epoxyboard
(b)(Note 2b)
t = 10 s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50 Common source 20
ID = 18 A
Ta = 25°C
40
Pulse test
16
30
VDS
20
10
VDD = 6V
12
24
VGS
12
8
4
00
0 10 20 30 40 50 60 70
Total gate charge Qg (nC)
5 2009-09-29
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TPC8029.PDF ] |
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