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Datasheet BFR90 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BFR90HIGH FREQUENCY TRANSISTOR

BFR90 CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON J< MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 60°C Derate above 60°C Storage Temperature Symbol v CEO VCBO v EBO "C P
Motorola Semiconductors
Motorola Semiconductors
transistor
2BFR90Silicon NPN Planar RF Transistor

BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308
Vishay Telefunken
Vishay Telefunken
transistor
3BFR90RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High
Microsemi Corporation
Microsemi Corporation
transistor
4BFR90RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
Advanced Power Technology
Advanced Power Technology
transistor
5BFR90ASilicon NPN Planar RF Transistor

BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Abs
TEMIC Semiconductors
TEMIC Semiconductors
transistor


BFR Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BFR106NPN 5 GHz wideband transistor

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f
NXP Semiconductors
NXP Semiconductors
transistor
2BFR106NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)

BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
3BFR106Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply volta
Infineon Technologies AG
Infineon Technologies AG
transistor
4BFR106Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB

New Jersey Semiconductor
New Jersey Semiconductor
data
5BFR14BNPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz

Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
6BFR14CNPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz

Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
7BFR180NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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