Datasheet.kr   

BLL6H1214L-250 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL6H1214L-250
기능 LDMOS L-band Radar Power Transistor
제조업체 NXP
로고 NXP 로고 



전체 11 페이지

		

No Preview Available !

BLL6H1214L-250 데이터시트, 핀배열, 회로
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 01 — 11 December 2009
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS PL
Gp ηD
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55 15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
www.DataSheet4U.com
„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %:
‹ Output power = 250 W
‹ Power gain = 17 dB
‹ Efficiency = 55 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1.2 GHz to 1.4 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)




BLL6H1214L-250 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
7. Application information
7.1 Impedance information
Table 8. Typical impedance
Typical values unless otherwise specified.
f
GHz
ZS
Ω
1.2 1.268 j2.623
1.3 2.193 j2.457
1.4 2.359 j2.052
ZL
Ω
2.987 j1.664
2.162 j1.326
1.604 j1.887
gate
ZS
Fig 1. Definition of transistor impedance
drain
ZL
001aaf059
7.2 RF performance
350
PL
(W)
300
www.DataShe2e5t04U.com
001aal165
200 (1)
(2)
(3)
150
100
50
0
0369
Pi (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 2. Output power as a function of input power;
typical values
20
Gp
(dB)
16
12
(1)
(2)
(3)
001aal166
8
4
0
0 50 100 150 200 250 300 350
PL (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3. Power gain as a function of load power;
typical values
BLL6H1214L-250_1214LS-250_1
Objective data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
4 of 11

4페이지










BLL6H1214L-250 전자부품, 판매, 대치품
NXP Semiconductors
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
q
1
B
C
L
c
H U2
A
www.DataSheet4U.com
2
b
p E1
w1 M A M B M
E
w2 M C M
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
D D1 E E1 F
H
L
p
Q q U1 U2 w1
mm
4.72 12.83 0.15 20.02 19.96 9.50
3.43 12.57 0.08 19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
27.94 34.16
33.91
9.91
9.65
0.25
inches
0.186
0.135
0.505 0.006
0.495 0.003
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
0.067
0.057
1.100
1.345
1.335
0.390
0.380
0.01
w2
0.51
0.02
OUTLINE
VERSION
SOT502A
IEC
REFERENCES
JEDEC
JEITA
Fig 8. Package outline SOT502A
BLL6H1214L-250_1214LS-250_1
Objective data sheet
Rev. 01 — 11 December 2009
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
© NXP B.V. 2009. All rights reserved.
7 of 11

7페이지



구       성총 11 페이지
다운로드[ BLL6H1214L-250.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BLL6H1214L-250

LDMOS L-band Radar Power Transistor

NXP
NXP

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵