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BLF881S 데이터시트 PDF




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부품번호 BLF881S 기능
기능 UHF Power LDMOS Transistor
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BLF881S 데이터시트, 핀배열, 회로
BLF881; BLF881S
UHF power LDMOS transistor
Rev. 01 — 10 December 2009
Preliminary data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f
PL PL(PEP) PL(AV) Gp
ηD
IMD3
IMDshldr
(MHz)
(W) (W)
(W) (dB) (%) (dBc) (dBc)
2-tone, class AB
f1 = 860; f2 = 860.1 - 140
-
21 49 34 -
DVB-T (8k OFDM) 858
--
33 21 34 -
33[1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
www.DataSheet4U.com
„ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
‹ Peak envelope power load power = 140 W
‹ Power gain = 21 dB
‹ Drain efficiency = 49 %
‹ Third order intermodulation distortion = 34 dBc
„ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
‹ Average output power = 33 W
‹ Power gain = 21 dB
‹ Drain efficiency = 34 %
‹ Shoulder distance = 33 dBc (4.3 MHz from center frequency)
„ Integrated ESD protection
„ Excellent ruggedness
„ High power gain




BLF881S pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
Table 7. RF characteristics …continued
Th = 25 °C unless otherwise specified.
Symbol Parameter
DVB-T (8k OFDM)
VDS
IDq
PL(AV)
Gp
ηD
IMDshldr
PAR
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Conditions
Min Typ Max Unit
-
-
-
20
30
[1] -
[2] -
50 -
V
0.5 -
A
33 -
W
21 -
dB
34 -
%
33 30 dBc
8.3 -
dB
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
www.DataSheet4U.com
200
Coss
(pF)
160
001aal074
120
80
40
0
0 20 40 60 80
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values
BLF881_BLF881S_1
Preliminary data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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BLF881S 전자부품, 판매, 대치품
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 DVB-T
9.0
PAR
(dB)
8.0
7.0
001aal080 50
PAR
D
(%)
40
D
30
25
Gp
(dB)
23
21
19
17
Gp
IMDshdr
001aal081 0
IMDshdr
(dBc)
10
20
30
40
6.0 20
400 500 600 700 800 900
f (MHz)
Fig 7.
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in
Section 8.
DVB-T PAR at 0.01 % probability on the CCDF
and drain efficiency as function of frequency;
typical values
15 50
400 500 600 700 800 900
f (MHz)
Fig 8.
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in
Section 8.
DVB-T power gain and shoulder distance as
function of frequency; typical values
7.3 Ruggedness in class-AB operation
www.DataSheet4U.com
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power. Ruggedness is measured in the application circuit as
described in Section 8.
BLF881_BLF881S_1
Preliminary data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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