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부품번호 | MWI75-12A8 기능 |
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기능 | IGBT Modules | ||
제조업체 | IXYS Corporation | ||
로고 | |||
전체 4 페이지수
MWI 75-12 A8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
IC25 = 125 A
VCES
= 1200 V
VCE(sat) typ. = 2.2 V
13, 21
1
2
3
4
14, 20
59
6 10
7 11
8 12
19
17
15
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
125
85
VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 150
VCEK ≤ VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
15
Ω;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
500 W
Symbol
Conditions
www.DataSheet4U.com
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 3 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 75 A
V
GE
=
±15
V;
R
G
=
15
Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 75 A
(per IGBT)
2.2 2.6 V
2.5 V
4.5 6.5 V
5 mA
3 mA
400 nA
100 ns
50 ns
650 ns
50 ns
12.1 mJ
10.5 mJ
5.5 nF
350 nC
0.25 K/W
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-2
MWI 75-12 A8
32
mJ
24
Eon
VCE = 600 V
VGE = ±15 V
RG = 15 Ω
TVJ = 125°C
16
td(on)
8
ns
6
t
4
20
mJ
Eoff 15
VCE = 600 V
VGE = ±15 V
RG = 15 Ω
TVJ = 125°C
10
10
ns
75
50
82
Eon
0
0
40
0
80 120 A 160
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
32
mJ
Eon 24
8
td(on) ns
6
t
16 4
8
Eon
0
0 10
VCE = 600 V
VGE = ±15 V
IC = 75 A
TVJ = 125°C
20 30 40
RG
2
0
50 Ω 60
www.DataSheet4UF.cigo.m9 Typ. turn on energy and switching
times versus gate resistor
200
A
ICM 150
100
50
RG = 15 Ω
TVJ = 125°C
5 25
00
0 40 80 120 A 160
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
15
mJ
Eoff
10
5
VCE = 600 V
VGE = ±15 V
IC = 75 A
TVJ = 125°C
n
00
0 10 20 30 40 50 Ω 60
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
single pulse
0
0 200 400 600 800 1000 1200 1400 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
0.0001
0.0001 0.001 0.01
0.1
MWI75-12A8
1
t
s 10
Fig. 12 Typ. transient thermal impedance
4-2
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MWI75-12A5 | IGBT Modules | IXYS Corporation |
MWI75-12A8 | IGBT Modules | IXYS Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |