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Datasheet WTK9435 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WTK9435 | Surface Mount P-Channel Enhancement Mode MOSFET WTK9435
Surface Mount P-Channel Enhancement Mode MOSFET
D
P b Lead(Pb)-Free
DRAIN CURRENT -5.3 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
1 3
S S
8 7
D
2
D
6
S
Features:
D
G
4
5
* Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V * Si |  Weitron Technology | mosfet |
WTK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WTK4224 | Surface Mount Dual N-Channel Enhancement Mode POWER MOSFET WTK4224
Surface Mount Dual N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 10 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
D1 S1 G1 S2 G2
1 2 3 8 7 6
D1 D2 D2
Features:
*Super high dense cell design for low RDS(ON) RDS(ON)<14mΩ @VGS = 10V RDS(ON)<20mΩ @VGS = 4.5V *Simple Drive Requi Weitron Technology mosfet | | |
| 2 | WTK4228 | Surface Mount Dual N-Channel Enhancement Mode MOSFET WTK4228
Surface Mount Dual N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 6.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
D1 S1 G1 S2 G2
1 2 3 8 7 6
D1 D2 D2
Features:
*Super high dense cell design for low RDS(ON) RDS(ON)<26mΩ @VGS = 10V RDS(ON)<40mΩ @VGS = 4.5V *Simple Drive Requ Weitron Technology mosfet | | |
| 3 | WTK4424 | Surface Mount N-Channel Enhancement Mode MOSFET WTK4424
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 13.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
D
1 2 3 4
S S S G
8 7 6 5
D D D
Description:
The WTK4424 provide the designer with the best combination of fast switching, ruggedized device design, low on-resista Weitron Technology mosfet | | |
| 4 | WTK4435 | Surface Mount P-Channel Enhancement Mode MOSFET WTK4435
Surface Mount P-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE
D G
4 5
D
1 2 3
S S S
8 7 6
D D
Features:
-30 VOLTAGE
* Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V * Simple Drive Weitron Technology mosfet | | |
| 5 | WTK4501 | N AND P-Channel Enhancement Mode POWER MOSFET WTK4501
N AND P-Channel Enhancement Mode POWER MOSFET
P b Lead(Pb)-Free
7,8 DRAIN
N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES
2 GATE
Features:
* Low Gate change * Low On-Resistance N-CH RDS(ON)<42mΩ@VGS = Weitron Technology mosfet | | |
| 6 | WTK6679 | Surface Mount P-Channel Enhancement Mode MOSFET WTK6679
Surface Mount P-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT -14 AMPERES DRAIN SOURCE VOLTAGE
D G
4 5
D
1 2 3
S S S
8 7 6
D D
Features:
* Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V * Simple Drive Requirement Weitron Technology mosfet | | |
| 7 | WTK6680 | Surface Mount N-Channel Enhancement Mode MOSFET WTK6680
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 11.5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
D
1 2 3 4
S S S G
8 7 6 5
D D D
Description:
The WTK6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resista Weitron Technology mosfet | |
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