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PDF BTA12-800C Data sheet ( Hoja de datos )

Número de pieza BTA12-800C
Descripción 12A TRIACS
Fabricantes STMicroelectronics　
Logotipo STMicroelectronics Logotipo



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No Preview Available ! BTA12-800C Hoja de datos, Descripción, Manual

® BTA/BTB12 and T12 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD
12A TRIACS
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
VDRM/VRRM
IGT (Q1)
12
600 and 800
5 to 50
A
V
mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A2
G
A1
A2
A1 A2
G
D2PAK
(T12-G)
A2
A1
A2
G
TO-220AB Insulated
(BTA12)
A1
A2
G
TO-220AB
(BTB12)
ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
D²PAK/TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
Tc = 105°C
Tc = 90°C
t = 20 ms
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Value
12
120
126
78
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
September 2002 - Ed: 6A
1/7

1 page




BTA12-800C pdf
BTA/BTB12 and T12 Series
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
Tj max
10
Tj=25°C
VTM(V)
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1
Repetitive
Tc=90°C
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
ITSM (A), I²t (A²s)
1000
dI/dt limitation:
50A/µs
100
10
0.01
tp (ms)
0.10 1.00
Tj initial=25°C
ITSM
I²t
10.00
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 8-1: Relative variation of critical rate of
www.DataShdeeetc4rUe.acosme of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
2.4 SW
2.0
C
1.6 B
1.2
0.8
0.4
0.0
0.1
(dV/dt)c (V/µs)
1.0 10.0
BW/CW/T1235
100.0
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
3.5
TW
3.0
2.5
2.0
1.5
1.0
0.5 (dV/dt)c (V/µs)
0.0
0.1
1.0 10.0
100.0
5/7

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