Datasheet.kr   

BTA12-600SW 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 BTA12-600SW은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BTA12-600SW 자료 제공

부품번호 BTA12-600SW 기능
기능 12A TRIACS
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


BTA12-600SW 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

BTA12-600SW 데이터시트, 핀배열, 회로
® BTA/BTB12 and T12 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD
12A TRIACS
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
VDRM/VRRM
IGT (Q1)
12
600 and 800
5 to 50
A
V
mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A2
G
A1
A2
A1 A2
G
D2PAK
(T12-G)
A2
A1
A2
G
TO-220AB Insulated
(BTA12)
A1
A2
G
TO-220AB
(BTB12)
ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
D²PAK/TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
Tc = 105°C
Tc = 90°C
t = 20 ms
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Value
12
120
126
78
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
September 2002 - Ed: 6A
1/7




BTA12-600SW pdf, 반도체, 판매, 대치품
BTA/BTB12 and T12 Series
OTHER INFORMATION
Part Number
Marking
BTA/BTB12-xxxyz
BTA/BTB12-xxxyzRG
T1235-xxxG
T1235-xxxG-TR
BTA/BTB12-xxxyz
BTA/BTB12-xxxyz
T1235xxxG
T1235xxxG
Note: xxx = voltage, yy = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
16
14
12
10
8
6
4
2 IT(RMS)(A)
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Weight
2.3 g
2.3 g
1.5 g
1.5 g
Base
quantity
250
50
50
1000
Packing
mode
Bulk
Tube
Tube
Tape & reel
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25
BTB/T12
BTA
Tc(°C)
50 75
100 125
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
IT(RMS) (A)
3.5
www.DataSh3e.0et4U.com
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D2PAK
(S=1cm2)
Tamb(°C)
50 75
100 125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
Zth(j-a)
1E-2
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
4/7

4페이지










BTA12-600SW 전자부품, 판매, 대치품
PACKAGE MECHANICAL DATA
TO-220AB / TO-220AB Ins.
BC
b2
L
I
A
F
l4
a1
l3
l2
a2
c2
b1
e
M
c1
BTA/BTB12 and T12 Series
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20
15.90 0.598
0.625
a1 3.75
0.147
a2 13.00
14.00 0.511
0.551
B 10.00
10.40 0.393
0.409
b1 0.61
0.88 0.024
0.034
b2 1.23
1.32 0.048
0.051
C 4.40
4.60 0.173
0.181
c1 0.49
0.70 0.019
0.027
c2 2.40
2.72 0.094
0.107
e 2.40
2.70 0.094
0.106
F 6.20
6.60 0.244
0.259
I 3.75
3.85 0.147
0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65
2.95 0.104
0.116
l2 1.14
1.70 0.044
0.066
l3 1.14
1.70 0.044
0.066
M 2.60
0.102
www.DataSheet4U.com
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
7/7

7페이지


구       성 총 7 페이지수
다운로드[ BTA12-600SW.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BTA12-600S

Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube

New Jersey Semiconductor
New Jersey Semiconductor
BTA12-600SW

Triacs

Inchange Semiconductor
Inchange Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵