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BTA12-800CW3G 데이터시트 PDF




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BTA12-800CW3G 데이터시트, 핀배열, 회로
BTA12-600CW3G,
BTA12-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V
On-State Current Rating of 12 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt 1500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt 1.5 A/ms minimum at 125°C
Internally Isolated (2500 VRMS)
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = 40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA12600CW3G
BTA12800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
12
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
105 A
46 A2sec
NonRepetitive Surge Peak OffState
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ 40 to +125 °C
Storage Temperature Range
Tstg 40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
4
MT1
G
MARKING
DIAGRAM
123
TO220AB
CASE 221A
STYLE 12
BTA12xCWG
AYWW
x = 6 or 8
A = Assembly Location (Optional)*
Y = Year
WW = Work Week
G = PbFree Package
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA12600CW3G
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
BTA12800CW3G TO220AB 50 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 1
1
Publication Order Number:
BTA12600CW3/D




BTA12-800CW3G pdf, 반도체, 판매, 대치품
125
110
95
80
65 0
BTA12600CW3G, BTA12800CW3G
120°, 90°, 60°, 30°
180°
DC
2 4 6 8 10
IT(RMS), RMS ON-STATE CURRENT (A)
Figure 1. RMS Current Derating
12
20
18 DC
16 180°
14 120°
12
10
8 90°
6 60°
4 30°
2
0 0 2 4 6 8 10 12
IT(AV), AVERAGE ON-STATE CURRENT (A)
Figure 2. On-State Power Dissipation
1000
1
Typical @
100 TJ = 40°C
Typical @ TJ = 25°C
Typical @ TJ = 125°C
10
0.1
0.01
0.1
1 10 100 1000
t, TIME (ms)
Figure 4. Thermal Response
1 · 104
Typical @ TJ = 125°C
1
Typical @ TJ = 25°C
Typical @ TJ = 40°C
0.10.5
1 1.5 2 2.5 3 3.5 4 4.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 3. On-State Characteristics
5
55
45
35
MT2 POSITIVE
25
15
MT2 NEGATIVE
5
40 25 10 5 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Hold Current Variation
110 125
http://onsemi.com
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