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KFG1216D2M 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 KFG1216D2M은 전자 산업 및 응용 분야에서
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부품번호 KFG1216D2M 기능
기능 FLASH MEMORY
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KFG1216D2M 데이터시트, 핀배열, 회로
OneNAND512/OneNAND1GDDP
FLASH MEMORY
Density
512Mb
1Gb
OneNAND SPECIFICATION
Part No.
KFG1216Q2M-DEB
KFG1216D2M-DEB
KFG1216U2M-DIB
KFH1G16Q2M-DEB
VCC(core & IO)
1.8V(1.7V~1.95V)
2.65V(2.4V~2.9V)
3.3V(2.7V~3.6V)
1.8V(1.7V~1.95V)
Temperature
Extended
Extended
Industrial
Extended
PKG
63FBGA(LF)
63FBGA(LF)
63FBGA(LF)
N/A
www.DataSheet4U.com
Version: Ver. 1.4
Date: June 15th, 2005
1




KFG1216D2M pdf, 반도체, 판매, 대치품
OneNAND512/OneNAND1GDDP
FLASH MEMORY
Document Title
OneNAND
Revision History
Revision No. History
Draft Date
0.4 1. Corrected the errata
June 22, 2004
2. Added spare assignment information in detail
3. Added NAND array memory map
4. Added manufacturer ID for CS as 00ECh
5. Added stepping ID for CS in version ID register
6. Divided default status of interrupt status register by Warm,Hot reset and
Cold reset
7. Revised Load operation flow chart
8. Revised Program operation flow chart
9. Deleted DBS setting step in Copy-back operation
10. Added OTP description
11. Revised OTP Load and Program flow chart
12. Added INT guidance
13. ECC description is revised
14. Added Data Protection Scheme during Power-down
15. Added DC/AC parameters
Remark
Preliminary
1.0
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1. Deleted 2.7V product
August 5, 2004
2. Added 2.65V product
3. Added 3.3V product and industrial temperature in 3.3V product
4. Deleted Unlock/Lock BootRAM command
5. Added DBS setting step in Copy-back operation
6. Added 2.65V/3.3V DC parameters
7. Revised tCES from 9ns to 7ns
8. Deleted tOEH in asynchronous read operation
9. Revised NOP from 4 times per each main and spare in a page to 2 times
per sector
10. Revised Write Protection status description
11. Added DDP selection and operation guidance
12. Added 1Gb DDP device ID
13. Added INT bit status in Cold Reset operation
14. Moved Interrupt register setting before inputting command in all flow
charts
15. Revised Dual operation diagrams
16. Added and revised the asynchronous read operation timing diagram
17. Revised the asynchronous write operation timing diagram
18. Added the tREADY parameter in Hot Reset operation
Final
1.1 1. Revised standby current for DDP
August 26, 2004 Final
1.2 1. Corrected DDP device ID
2. Excluded Commercial Temperature range
3. Revised Cold Reset timing diagram
4. Added CE and RDY in Warm Reset diagram
5. Excluded Write while Load and Read while Program operation
6. Revised Extended Temperature minimum value from -25 to -30
7. Revised typical tOTP, tLOCK from 300us to 600us
8. Revised max tOTP, tLOCK from 600us to 1000us
9. Revised Icc4, Icc5 test condition
10. Added Endurance and Data Retention
October 26, 2004
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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KFG1216D2M 전자부품, 판매, 대치품
OneNAND512/OneNAND1GDDP
FLASH MEMORY
2. GENERAL DESCRIPTION
OneNAND is a single-die chip with standard NOR Flash interface using NAND Flash Array. This device is comprised of logic and
NAND Flash Array and 5KB internal BufferRAM. 1KB BootRAM is used for reserving bootcode, and 4KB DataRAM is used for buff-
ering data. The operating clock frequency is up to 54MHz. This device is X16 interface with Host, and has the speed of ~76ns random
access time. Actually, it is accessible with minimum 4clock latency(host-driven clock for synchronous read), but this device adopts the
appropriate wait cycles by programmable read latency. OneNAND provides the multiple sector read operation by assigning the num-
ber of sectors to be read in the sector counter register. The device includes one block sized OTP(One Time Programmable), which
can be used to increase system security or to provide identification capabilities.
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관련 데이터시트

부품번호상세설명 및 기능제조사
KFG1216D2A

FLASH MEMORY

Samsung semiconductor
Samsung semiconductor
KFG1216D2M

FLASH MEMORY

Samsung semiconductor
Samsung semiconductor

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