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WCMB2016R4X 데이터시트 PDF




Weida Semiconductor에서 제조한 전자 부품 WCMB2016R4X은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 WCMB2016R4X 자료 제공

부품번호 WCMB2016R4X 기능
기능 128K x 16 Static RAM
제조업체 Weida Semiconductor
로고 Weida Semiconductor 로고


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WCMB2016R4X 데이터시트, 핀배열, 회로
WCMB2016R4X
Features
• Low voltage range:
1.65V1.95V
• Ultra-low active power
— Typical Active Current: 0.5 mA @ f = 1 MHz
— Typical Active Current: 1.5 mA @ f = fmax
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The WCMB2016R4X is a high-performance CMOS static
RAM organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This device is ideal for portable applications such as cellular
telephones. The device also has an automatic power-down
feature that significantly reduces power consumption by 99%
when addresses are not toggling. The device can also be put
into standby mode when deselected (CE HIGH or both BLE
Logic Block Diagram
www.DataSheet4U.com
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
128K x 16
RAM Array
2048 X 1024
128K x 16 Static RAM
and BHE are HIGH). The input/output pins (I/O0 through I/O15)
are placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High En-
able and Byte Low Enable are disabled (BHE, BLE HIGH), or
during a write operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O8 to I/O15. See the
Truth Table at the back of this data sheet for a complete de-
scription of read and write modes.
The WCMB2016R4X is available in a 48-ball FBGA package.
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
Power -Down
Circuit
CE
BHE
BLE
BHE
WE
CE
OE
BLE




WCMB2016R4X pdf, 반도체, 판매, 대치품
AC Test Loads and Waveforms
VCC
OUTPUT
R1
30 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
VCC Typ
GND
10%
90%
90%
10%
R2
Rise Time:
Fall Time:
1 V/ns
1 V/ns
WCMB2016R4X
Equivalent to:
THÉVENIN EQUIVALENT
OUTPUT
RTH
V
Parameters
R1
R2
RTH
VTH
1.8V
13500
10800
6000
0.80
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
ICCDR
tCDR[5]
www.DattRaS[6h] eet4U.com
Description
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Conditions
VCC = 1.0V
CE > VCC 0.2V,
VIN > VCC 0.2V or VIN < 0.2V
Data Retention Waveform[7]
Min.
1.0
0
tRC
VCC
CE or
BHE.BLE
VCC(min.)
tCDR
DATA RETENTION MODE
VDR > 1.0 V
UNIT
Ohms
Ohms
Ohms
Volts
Typ.[4]
0.5
Max.
1.95
5
VCC(min.)
tR
Unit
V
µA
ns
ns
Notes:
6. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.
7. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
4

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WCMB2016R4X 전자부품, 판매, 대치품
Switching Waveforms
[11, 15, 16]
Write Cycle No. 1 (WE Controlled)
ADDRESS
CE
tSA
WE
tWC
tSCE
tAW
tPWE
BHE/BLE
tBW
OE
DATA I/O
NOTE 17
tHZOE
tSD
DATAIN VALID
Write Cycle No. 2 (CE Controlled) [11, 15, 16]
ADDRESS
CE
www.DataSheet4U.com
WE
tSA
tAW
tWC
tSCE
tPWE
BHE/BLE
tBW
OE
DATA I/O
NOTE 17
tHZOE
tSD
DATAIN VALID
Note:
15. Data I/O is high impedance if OE = VIH.
16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
17. During this period, the I/Os are in output state and input signals should not be applied.
WCMB2016R4X
tHA
tHD
tHA
tHD
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관련 데이터시트

부품번호상세설명 및 기능제조사
WCMB2016R4X

128K x 16 Static RAM

Weida Semiconductor
Weida Semiconductor

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