|
|
Datasheet WCMC8016V9X Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WCMC8016V9X | 8Mb (512K x 16) Pseudo Static RAM ADVANCE INFORMATION
WCMC8016V9X
8Mb (512K x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz • • • • • — Typical active current: 11mA @ f = fmax Ultra low standby power Ea |  Weida Semiconductor | data |
WCM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WCM2001 | MOSFET, Transistor WCM2001
N- and P-Channel Complementary, 20V, MOSFET
V(BR)DSS
N-Channel 20 V
P-Channel -20 V
RDS(on) Typ. ( mȍ)
180 @ 4.5V 225 @ 2.5V 280 @ 1.8V 85 @ -4.5V 110 @ -2.5V 150 @ -1.8V
Descriptions
The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-  WillSEMI mosfet | | |
| 2 | WCM2002 | MOSFET, Transistor 01234436
75859
5 81
9
534595
9525
5]^5 e]
^5]f^
6 6 6
,-%".//#26 '(6
(I'O(g6Nh6`iIjN (I'kjg6Nh6`'IjN6 (IOO(g6Nh6`lImN6
1-%".//#26 -'(6
(Ij'(g6Nh66`-6iIjN (IPmjg6Nh66`6-'IjN (Imn(g6Nh66`6-lImN
6
5
6
!"#6$%&'(('6)*6+"#6,-6./061-%".//#26
#/"./3#4#/+6&5667)#2 WillSEMI mosfet | | |
| 3 | WCM2007 | MOSFET, Transistor WillSEMI mosfet | | |
| 4 | WCM2064 | MOSFET, Transistor WCM2064
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
N-Channel 20
P-Channel -20
Typical RDS(on) (Ω)
0.034@ VGS=4.5V 0.041@ VGS=2.5V 0.050@ VGS=1.8V 0.083@VGS=- 4.5V 0.110@VGS= -2.5V 0.145@VGS= -1.8V
Descriptions
The WCM2064 is the N-Channel and P-Channel enhancement MOS Field Effect Transi WillSEMI mosfet | | |
| 5 | WCM2068 | MOSFET, Transistor WCM2068
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
N-Channel 20
P-Channel -20
Typical RDS(on) (Ω)
0.033@ VGS=4.5V 0.037@ VGS=3.3V 0.041@ VGS=2.5V 0.085@VGS=- 4.5V 0.097@VGS= -3.3V 0.110@VGS= -2.5V
Descriptions
The WCM2068 is the N-Channel and P-Channel enhancement MOS Field Effect Transi WillSEMI mosfet | | |
| 6 | WCM2070 | MOSFET, Transistor WCM2070
N- and P-Channel Complementary, 12V,MOSFET
N-Channel P-Channel
VDS (V) 12 -12
Typical RDS(on) (Ω)
0.028@ VGS=4.5V 0.035@ VGS=2.5V 0.046@ VGS=1.8V 0.057@VGS=- 4.5V 0.087@VGS= -2.5V 0.140@VGS= -1.8V
Descriptions
The WCM2070 is the N-Channel and P-Channel enhancement MOS Field Effect Tran WillSEMI mosfet | | |
| 7 | WCM2079 | MOSFET, Transistor WCM2079
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
Typical RDS(on) (Ω)
N-Channel 20
P-Channel -20
0.020@VGS=10V 0.023@VGS=4.5V 0.028@VGS=-10V 0.035@VGS=-4.5V
Descriptions
The WCM2079 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC c WillSEMI mosfet | |
| Esta página es del resultado de búsqueda del WCMC8016V9X. Si pulsa el resultado de búsqueda de WCMC8016V9X se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |