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부품번호 | FM160-N 기능 |
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기능 | (FM120-N - FM1100-N) CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER | ||
제조업체 | PACELEADER INDUSTRIAL | ||
로고 | |||
전체 3 페이지수
FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
FEATURES
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Very tiny plastic SMD package.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
MAXIMUM RATING (AT TA=25oC unless otherwise noted)
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PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25 OC
VR = VRRM TA = 125 OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
1.0 A
30 A
IR
RèJA
CJ
TSTG
0.5
mA
10
90 OC/W
120 pF
-65 +175 OC
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
V
R
*
RM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
www.paceleader.tw
1
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
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구 성 | 총 3 페이지수 | ||
다운로드 | [ FM160-N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FM160-M | Silicon epitaxial planer type | Formosa MS |
FM160-MH | (FM120-MH - FM1100-MH) Chip Schottky Barrier Diodes | Formosa MS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |