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부품번호 | MPS2222 기능 |
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기능 | General Purpose Transistors | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS2222/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2
BASE
MPS2222
MPS2222A*
*Motorola Preferred Device
MAXIMUM RATINGS
1
EMITTER
Rating
Symbol MPS2222 MPS2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30 40
60 75
5.0 6.0
600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
MPS2222
MPS2222A
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MPS2222
MPS2222A
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222
MPS2222A
MPS2222A
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
MPS2222
MPS2222A
MPS2222
MPS2222A
MPS2222A
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222A
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
30 — Vdc
40 —
60 — Vdc
75 —
5.0 — Vdc
6.0 —
— 10 nAdc
µAdc
— 0.01
— 0.01
— 10
— 10
— 100 nAdc
— 20 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
MPS2222 MPS2222A
200
100
70
50
30
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
10
RS = OPTIMUM
8.0
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
RS = SOURCE
RS = RESISTANCE
100 µA, RS = 2.0 kΩ
6.0 50 µA, RS = 4.0 kΩ
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 7. Frequency Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
300
200 t′s = ts – 1/8 tf
100
70
50 tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn – Off Time
10
f = 1.0 kHz
8.0
IC = 50 µA
100 µA
6.0 500 µA
1.0 mA
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current–Gain Bandwidth Product
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MPS2222 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung |
MPS2222 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | TRANSYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |