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AUIRF7739L2TR1 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRF7739L2TR1은 전자 산업 및 응용 분야에서
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부품번호 AUIRF7739L2TR1 기능
기능 N-Channel HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


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AUIRF7739L2TR1 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
PD - 97442
AUIRF7739L2TR
AUIRF7739L2TR1
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead free, RoHS and Halogen free
Automotive DirectFET™ Power MOSFET ‚
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
700µ
1000µ
270A
220nC
Applicable DirectFET Outline and Substrate Outline 
L8 DirectFET™ ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
VDS
www.DaIVDtGa@SS hTeCet4=U2.5c°oCm
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
gSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
™Repetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
40
± 20
270
190
46
375
1070
125
3.8
270
160
See Fig.12a, 12b, 15, 16
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Max.
40
–––
–––
1.2
0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
1
01/05/10




AUIRF7739L2TR1 pdf, 반도체, 판매, 대치품
AUIRF7739L2TR/TR1
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1 60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
4.5V
1
10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
ID = 160A
8
6
4
2 TJ = 125°C
0 TJ = 25°C
5.0 5.5 6.0 6.5 7.0 7.5 8.0
www.DataSheet4U.com
VGS, Gate -to -Source Voltage (V)
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
100
TJ = 175°C
10 TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60µs PULSE WIDTH
Tj = 175°C
4.5V
10
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
0.93
VGS = 10V
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
0
40 80 120 160 200
ID , Drain Current (A)
Fig 4. Typical On-Resistance vs. Drain Current
2.0
ID = 160A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
www.irf.com

4페이지










AUIRF7739L2TR1 전자부품, 판매, 대치품
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cy cle
250 ID = 160A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
15V
VDS
L
DRIVER
RG
2V0VGS
tp
D.U.T
IAS
0.01
+
-
VDD A
Fig 18a. Unclamped Inductive Test Circuit
www.DataSheet4U.com
0
210K
L
DUT
S
VCC
AUIRF7739L2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V(BR)DSS
tp
I AS
Fig 18b. Unclamped Inductive Waveforms
Id
Vgs
Vds
Vgs(th)
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
RD
D.U.T.
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
www.irf.com
Qgodr
Qgd Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 20b. Switching Time Waveforms
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
AUIRF7739L2TR

N-Channel HEXFET Power MOSFET

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International Rectifier
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