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부품번호 | STP6N95K5 기능 |
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기능 | Power MOSFETs | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 13 페이지수
STD6N95K5, STF6N95K5
STP6N95K5, STW6N95K5
N-channel 950 V, 1 Ω, 5 A TO-220, TO-220FP, TO-247, DPAK
Zener-protected SuperMESH 5™ Power MOSFET
Preliminary data
Features
Type
STD6N95K5
STF6N95K5
STP6N95K5
STW6N95K5
VDSS RDS(on)max
950 V < 1.25 Ω
ID
5A
PW
90 W
25 W
90 W
■ DPAK worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected
Application
■ Switching applications
Description
SuperMESH 5™ is a revolutionary avalanche-
rugged very high voltage Power MOSFET
technology based on an innovative proprietary
www.DataSvheeretitc4Ua.lcsotmructure. The result is a drastic reduction
in on-resistance and ultra low gate charge for
applications which require superior power density
and high efficiency.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
DPAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STD6N95K5
STF6N95K5
STP6N95K5
STW6N95K5
Marking
6N95K5
Package
DPAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
January 2010
Doc ID 16958 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
Electrical characteristics
2 Electrical characteristics
STD/F/P/W6N95K5
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
950
V
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDS = max rating,
VDS = Max rating,Tc=125 °C
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID= 2.5 A
3
1 µA
50 µA
±10 µA
4 5V
1 1.25 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
450
VDS =100 V, f=1 MHz, VGS=0 - 30 -
1
pF
pF
pF
www.DataSheet4U.com
Co(tr)(1)
Co(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
VGS = 0, VDS = 0 to 720 V
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1MHz open drain
VDD = 760 V, ID = 5 A
VGS =10 V
(see Figure 3)
- TBD -
pF
- TBD -
- 10.5 -
11
- TBD -
TBD
pF
Ω
nC
nC
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/13 Doc ID 16958 Rev 1
4페이지 STD/F/P/W6N95K5
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
www.DataSheet4U.com
Doc ID 16958 Rev 1
7/13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
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STP6N95K5 | Power MOSFETs | STMicroelectronics |
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