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부품번호 MW7IC930NR1 기능
기능 RF LDMOS Wideband Integrated Power Amplifiers
제조업체 Freescale Semiconductor
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MW7IC930NR1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
Document Number: MW7IC930N
Rev. 0, 8/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC930N wideband integrated circuit is designed with on - chip
matching that makes it usable from 728 to 960 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation.
Driver Application — 900 MHz
CT10yhp6aincmanAleS,l IBiDnaQgnl2ed=-wCi2da8trh5rie=mr3AW.,8P-4CoMuDtHM=zA3, .IP2nepWrufatotrStmsigaAnnvacgle.P,:AIVQRDDM==a7g.25n8idtuVBdoe@ltsC,0lIi.Dp0Qp1i1%n=g,
Probability on CCDF.
Frequency (1)
Gps
(dB)
PAE
(%)
ACPR
(dBc)
MW7IC930NR1
MW7IC930GNR1
MW7IC930NBR1
728 - 768 MHz, 920 - 960 MHz,
3.2 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
36.6 16.1 - 48.0
940 MHz
36.8 16.7 - 48.7
960 MHz
36.6 17.3 - 48.6
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 30 Watts
CW Pout.
TIDyQp2ic=al3P4o0utm@A 1 dB Compression Point ] 31 Watts CW, IDQ1 = 40 mA,
Driver Application — 700 MHz
CT10yhp6aincmanAleS,l IBiDnaQgnl2ed=-wCi2da8trh5rie=mr3AW.,8P-4CoMuDtHM=zA3, .IP2nepWrufatotrStmsigaAnnvacgle.P,:AIVQRDDM==a7g.25n8idtuVBdoe@ltsC,0lIi.Dp0Qp1i1%n=g,
Probability on CCDF.
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC930NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC930GNR1
Frequency
728 MHz
748 MHz
768 MHz
Gps
(dB)
36.4
36.4
36.4
PAE
(%)
16.1
16.1
16.0
ACPR
(dBc)
- 47.7
- 47.8
- 47.9
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC930NBR1
Features
www.DataSheCeht4aUra.ccotmerized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
GND 1
NC 2
NC 3
VDS1
GND
4
5
16 GND
15 NC
VDS1
RFin 6
14 RFout/VDS2
GND 7
RFin
RFout/VDS2
VGS1
VGS2
8
9
NC 10
13 NC
GND 11
12 GND
VGS1
VGS2
Quiescent Current
Temperature Compensation (2)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
1




MW7IC930NR1 pdf, 반도체, 판매, 대치품
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 =
285 mA, 920 - 960 MHz Bandwidth
VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 340 mA
Pout @ 1 dB Compression Point, CW
P1dB
31
W
IMD Symmetry @ 25 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
IMDsym
MHz
— 45 —
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
80
— MHz
Quiescent Current Accuracy over Temperature (1)
with 3 kΩ Gate Feed Resistors ( - 30 to 85°C)
ΔIQT — 0.02 —
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 3.2 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
GF — 0.2 — dB
ΔG — 0.036 — dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
0.01
— dBm/°C
Typical W - CDMA Broadband Performance — 700 MHz (In Freescale 700 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
IRL (dB)
728 MHz
36.4
16.1
- 47.7
- 17.9
748 MHz
36.4
16.1
- 47.8
- 20.7
768 MHz
36.4
16.0
- 47.9
- 21.8
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
www.DataSheet4U.com
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
4
RF Device Data
Freescale Semiconductor

4페이지










MW7IC930NR1 전자부품, 판매, 대치품
TYPICAL CHARACTERISTICS — 900 MHz
38
37.5 Gps
37
960 MHz
960 MHz
940 MHz
920 MHz
60
54
48
36.5 VDD = 28 Vdc
920 MHz
36 IDQ1 = 106 mA, IDQ2 = 285 mA
Single−Carrier W−CDMA, 3.84 MHz
35.5 Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
35 Probability on CCDF
34.5
PAE
34
960 MHz 940 MHz 42
36
30
920 MHz 24
18
12
33.5
33
1
ACPR
10
6
0
50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
40 0
Gain
35 −5
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
30 −10
25 −15
20 VDD = 28 Vdc IRL
Pin = −10 dBm
15
IDQ1 = 106 mA
IDQ2 = 285 mA
−20
−25
10 −30
450 550 650 750 850 950 1050 1150 1250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
www.DataSheet4U.com
W - CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
10
0
−10
3.84 MHz
−20 Channel BW
−30
−40
0.01
W−CDMA. ACPR Measured in 3.84 MHz
0.001 Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
0.0001 Probability on CCDF
0 1 2 34 5 6 789
PEAK−TO−AVERAGE (dB)
Figure 9. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
10
−50
−60 −ACPR in 3.84 MHz
Integrated BW
−70
+ACPR in 3.84 MHz
Integrated BW
−80
−90
−100
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 10. Single - Carrier W - CDMA Spectrum
RF Device Data
Freescale Semiconductor
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
7

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MW7IC930NR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Freescale Semiconductor

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