(PDF) RJH60F0DPK Datasheet - Silicon N Channel IGBT

Número de pieza	RJH60F0DPK
Descripción	Silicon N Channel IGBT
Fabricantes	Renesas Technology
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No Preview Available ! RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 C 12 3 G E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% 3. Value at Tc = 25°C Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC Note3 Tj Tstg Preliminary www.DataSheet4U.com REJ03G1834-0100 Rev.1.00 Oct 13, 2009 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) Ratings 600 ±30 50 25 100 100 201.6 150 –55 to +150 (Tc = 25°C) Unit V V A A A A W °C °C REJ03G1834-0100 Rev.1.00 Oct 13, 2009 Page 1 of 3 1 page

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