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FDS4435BZ 데이터시트 PDF




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부품번호 FDS4435BZ 기능
기능 P-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDS4435BZ 데이터시트, 핀배열, 회로
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
„ Extended VGSS range (-25V) for battery applications
„ HBM ESD protection level of ±3.8KV typical (note 3)
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
„ Termination is Lead-free and RoHS compliant
April 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
Pin 1
SO-8
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
25
50
°C/W
Device Marking
FDS4435BZ
Device
FDS4435BZ
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
1
www.fairchildsemi.com




FDS4435BZ pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -8.8A
8
6
VDD = -10V
VDD = -15V
VDD = -20V
4
4000
1000
Ciss
Coss
2
0
0 5 10 15 20 25
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
30
20
10
TJ = 125oC
TJ = 25oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
10 30
Figure9. Unclamped Inductive
Switching Capability
10
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
30
10-4
VDS = 0V
10-5
10-6
TJ = 125oC
10-7
TJ = 25oC
10-8
10-9
0
5 10 15 20 25
-VGS, GATE TO SOURCE VOLTAGE(V)
30
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
8
VGS = -10V
6
4 VGS = -4.5V
2
RTJA = 50oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
150
10 100us
1ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
RTJA = 125oC/W
TA = 25oC
10
10ms
100ms
1s
10s
DC
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
4
www.fairchildsemi.com

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FDS4435BZ 전자부품, 판매, 대치품
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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