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PDF AOP802 Data sheet ( Hoja de datos )
| Número de pieza | AOP802 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOP802
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP802 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOP802 is Pb-free
(meets ROHS & Sony 259 specifications). AOP802L
is a Green Product ordering option. AOP802 and
AOP802L are electrically identical.
Features
VDS (V) = 60V
ID = 7.9A (VGS = 10V)
RDS(ON) < 25mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
7.9
6.3
40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
30
66
25
Max
40
85
35
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AOP802.PDF ] | |
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