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PDF JDH3D01S Data sheet ( Hoja de datos )
| Número de pieza | JDH3D01S | |
| Descripción | Diode Silicon Epitaxial Schottky Barrier Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○ For wave detection
¾ Small package
JDH3D01S
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 4 V
IF 25 mA
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward current
Reverse current
Capacitance
Symbol
VF
IF
IR
CT
Test Condition
IF = 2 mA
VF = 0.5 V
VR = 0.5 V
VR = 0.2 V, f = 1 MHz
1 SSｱMﾉｰﾄ1ﾞ. 1ANODE1
2. CATHODE2
2 ｶｿｰ3ﾄ.ﾞ 2CATHODE1/ANODE2
3 ｶｿｰﾄﾞ 1/ｱﾉｰﾄﾞ 2
JEDEC
―
JEITA
―
TOSHIBA
1-2S1C
Weight:0.0024g(typ.)
Min
⎯
25
⎯
⎯
Typ. Max
0.25 ⎯
⎯⎯
⎯ 25
0.6 ⎯
Unit
V
mA
uA
pF
Marking
BH
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet JDH3D01S.PDF ] | |
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