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PDF W29C010 Data sheet ( Hoja de datos )
| Número de pieza | W29C010 | |
| Descripción | 128K X 8 CMOS FLASH MEMORY | |
| Fabricantes | Winbond | |
| Logotipo |  |
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W29C010
128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C010 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29C010 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
• Single 5-volt program and erase operations
• Fast page-write operations
− 128 bytes per page
− Page program cycle: 10 mS (max.)
− Effective byte-program cycle time: 39 µS
− Optional software-protected data write
• Fast chip-erase operation: 50 mS
• Read access time: 45/70/90 nS
• Typical page program/erase cycles: 1K/10K
• Ten-year data retention
• Software and hardware data protection
• Low power consumption
− Active current: 25 mA (typ.)
− Standby current: 20 µA (typ.)
• Automatic program timing with internal VPP
generation
• End of program detection
− Toggle bit
− Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard byte-wide pinouts
• Available packages: 32-pin 600 mil DIP, 450
mil SOP, TSOP and PLCC
Publication Release Date: April 1997
- 1 - Revision A1
1 page  
www.DataSheet4U.com
W29C010
TABLE OF OPERATING MODES
Operating Mode Selection
Operating Range = 0 to 70°C (Ambient Temperature), VDD = 5V ±10%, VSS = 0V, VHH = 12V
MODE
PINS
CE OE WE
ADDRESS
Read
VIL VIL VIH AIN
Write
VIL VIH VIL AIN
Standby
VIH X X X
Write Inhibit
X VIL X X
X X VIH X
Output Disable
X VIH X X
5-Volt Software Chip Erase VIL VIH VIL AIN
Product ID
VIL VIL VIH A0 = VIL; A1-A16 = VIL;
A9 = VHH
VIL VIL VIH A0 = VIH; A1-A16 = VIL;
A9 = VHH
DQ.
Dout
Din
High Z
High Z/DOUT
High Z/DOUT
High Z
DIN
Manufacturer Code DA
(Hex)
Device Code
C1 (Hex)
Publication Release Date: April 1997
- 5 - Revision A1
5 Page 
www.DataSheet4U.com
W29C010
AC Characteristics, continued
Read Cycle Timing Parameters
(VDD = 5.0V ±10% for 90 nS; VDD = 5.0V ±5% for 45 nS and 70 nS, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM. W29C010-45 W29C010-70
MIN. MAX. MIN. MAX.
Read Cycle Time
TRC 45 - 70 -
Chip Enable Access Time
TCE - 45 - 70
Address Access Time
TAA - 45 - 70
Output Enable Access Time
TOE
-
20
-
35
CE High to High-Z Output
TCHZ - 20 - 25
OE High to High-Z Output
TOHZ - 20 - 25
Output Hold from Address change TOH 0 - 0 -
W29C010-90
MIN. MAX.
90 -
- 90
- 90
- 40
- 25
- 25
0-
UNIT
nS
nS
nS
nS
nS
nS
nS
Byte/Page-write Cycle Timing Parameters
PARAMETER
SYMBOL
Write Cycle (erase and program)
TWC
Address Setup Time
TAS
Address Hold Time
TAH
WE and CE Setup Time
TCS
WE and CE Hold Time
TCH
OE High Setup Time
TOES
OE High Hold Time
TOEH
CE Pulse Width
TCP
WE Pulse Width
TWP
WE High Width
TWPH
Data Setup Time
TDS
Data Hold Time
TDH
Byte Load Cycle Time
TBLC
MIN.
-
0
50
0
0
0
0
70
70
100
50
0
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
Note: All AC timing signals observe the following guideline for determining setup and hold times:
Reference level is VIH for high-level signal and VIL for low-level signal.
MAX.
10
-
-
-
-
-
-
-
-
-
-
-
150
UNIT
mS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
- 11 -
Publication Release Date: April 1997
Revision A1
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet W29C010.PDF ] | |
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