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부품번호 | D10040200PL1 기능 |
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기능 | 45-1000MHz GaAs/GaN PWR DBLR HYBRID | ||
제조업체 | RF Micro Devices | ||
로고 | |||
D10040200P
L1 45-
1000 MHz
GaAs/GaN Pwr
Dblr Hybrid
D10040200PL1
www.DataSheet4U.com
45-1000MHz GaAs/GaN PWR DBLR HYBRID
Package: SOT-115J
Product Description
The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part
employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to
1000MHz. It provides high output capability, excellent linearity, and supe-
rior return loss performance with low noise and optimal reliability.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
INPUT
+VB
OUTPUT
Features
Low Current
Excellent Linearity
Superior Return Loss Perfor-
mance
Extremely Low Distortion
Optimal Reliability
Extremely Low Noise
Unconditionally Stable Under
All Terminations
High Output Capability
20.0dB Min. Gain at 1GHz
380mA Max. at 24VDC
Applications
45MHz to 1000MHz CATV
Amplifier Systems
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Overall
VB= 24V; TMB=30°C; ZS=ZL=75
Power Gain
18.5
19.0
19.5
dB f=45MHz
20.0
20.5
21.5 dB f=1000MHz
Slope [1]
1.0 1.5 2.5 dB f=45MHz to 1000MHz
Flatness of Frequency Response
0.8 dB f=45MHz to 1000MHz (Peak to Valley)
Input Return Loss
20
dB f=45MHz to 320MHz
19 dB f=320MHz to 640MHz
18 dB f=640MHz to 870MHz
16 dB f=870MHz to 1000MHz
Output Return Loss
20
dB f=45MHz to 320MHz
19 dB f=320MHz to 640MHz
18 dB f=640MHz to 870MHz
17 dB f=870MHz to 1000MHz
Noise Figure
3.0 4.0 dB f=50MHz to 1000MHz
Total Current Consumption (DC)
370.0
380.0
mA
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
DS091124
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 4
D10040200PL1
www.DataSheet4U.com
I
U
123 5 789
J
øG
S
T
P
C
E
K
N
M
R
O
Q
D
H
B
L
F
A
0 5 10mm
scale
Pinning:
1 2 34567 8 9
Notes:
European
Projection
All Dimensions in mm:
nominal
A 44,6 ± 0,2
B 13,6 ± 0,2
C 20,4 ± 0,5
D 8 ± 0,15
E 12,6 ± 0,15
F 38,1 ± 0,2
G 4 +0,2 / -0,05
H 4 ± 0,2
I 25,4 ± 0,2
J UNC 6-32
K 4,2 ± 0,2
L 27,2 ± 0,2
M 11,6 ± 0,5
N 5,8 ± 0,4
O 0,25 ± 0,02
P 0,45 ± 0,03
Q 2,54 ± 0,3
R 2,54 ± 0,5
S 2,54 ± 0,25
T 5,08 ± 0,25
U 5,08 ± 0,25
min
44,4
13,4
19,9
7,85
12,45
37,9
3,95
3,8
25,2
-
4,0
27,0
11,1
5,4
0,23
0,42
2,24
2,04
2,29
4,83
4,83
max
44,8
13,8
20,9
8,15
12,75
38,3
4,2
4,2
25,6
-
4,4
27,4
12,1
6,2
0,27
0,48
2,84
3,04
2,79
5,33
5,33
4 of 4
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS091124
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
D10040200PL1 | 45-1000MHz GaAs/GaN PWR DBLR HYBRID | RF Micro Devices |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |