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BU808DFX 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 BU808DFX은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BU808DFX 자료 제공

부품번호 BU808DFX 기능
기능 HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


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BU808DFX 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BU808DFX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
s HIGH VOLTAGE CAPABILITY (> 1400 V)
s HIGH DC CURRENT GAIN (TYP. 150)
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s LOW BASE-DRIVE REQUIREMENTS
s DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
s COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFX is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
3
2
1
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
April 2007
Value
1400
700
5
8
10
3
6
62
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
oC
oC
1/7




BU808DFX pdf, 반도체, 판매, 대치품
BU808DFX
Switching Time Inductive Load at 16KHZ
www.DataSheet4U.com
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at both 16 KHz scanning
frequencies for choosing the optimum negative
drive. The test circuit is illustrated in figure 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(IC)2
=
1
2
C
(VCEfly)2
ω
=
2
πf
=
1
√LC
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
4/7

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BU808DFX 전자부품, 판매, 대치품
www.DataSheet4U.com
BU808DFX
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