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PDF PFF2N60 Data sheet ( Hoja de datos )
| Número de pieza | PFF2N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Pyramis Corporation | |
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Pyramis Corporation
PFB2N60/PFF2N60
“The Silicon System Solutions Company”
Applications:
•Adaptor
•Charger
•SMPS Standby Power
•LCD Panel Power
Features:
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
N-Channel MOSFET
VDSS
600V
PRELIwMwIwN.DAatRaYSheet4U.com
RDS(ON) typical
3.7 Ω
ID
2.1 A
Ordering Information
PART NUMBER
PFB2N60
PFF2N60
PACKAGE
TO-220
TO-220F
BRAND
PFB2N60
PFF2N60
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
Symbol
Parameter
GDS
TO-220
Not to Scale
PFB2N60
GDS
TO-220F
Not to Scale
PFF2N60
Units
VDSS
ID
ID@ 100 oC
IDM
PD
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=38mH, ID=2.1 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
Maximum Soldering Lead Temperature
Max Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
(NOTE *1)
(NOTE *2)
(NOTE *3)
600
2.1 2.1*
Fig.ure 3
Figure 6
54 23
0.43 0.18
±30
84
Figure 8
3.0
300
260
-55 to 150
V
A
W
W/ oC
V
mJ
V/ ns
oC
* Drain current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the semiconductor device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case.
Junction-to-Ambient
PFB2N60 PFF2N60
2.3 5.5
62.5 62.5
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150 oC
1 cubic foot chamber, free air.
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C. May 2004
1 page  
PRELIMINARY
Figure 6. Maximum Peak Current Capability
www.DataSheet4U.com
100 TRANSCONDUCTANCE
FOR TEMPERATURES
MAY LIMIT CURRENT IN
THIS REGION
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 1----5---01---2-–--5---T---C---
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3 10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
7
PULSE DURATION = 250 µs
6
DUTY CYCLE = 0.5% MAX
VDS = 10 V
5
4
3
2
1
0
2.5
+150 oC
+25 oC
-55 oC
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, Gate-to-Source Voltage (V)
6.5
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
10 PULSE DURATION = 2 µs
9 DUTY CYCLE = 0.5% MAX
TC=25°C
8
7
6
VGS = 10V
VGS = 20 V
5
4
3
2
1
0
12
345
67
8
ID, Drain Current (A)
©2004 Pyramis Corp.
Figure 8. Unclamped Inductive Switching Capability
10
1 STARTING TJ = 150 oC
STARTING TJ = 25 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
.1 R equals total Series resistance of Drain circuit
1E-6 10E-6 100E-6 1E-3 10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1.8
0.6
0.4
0.2
-75
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.1A
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (oC)
150
PFB2N60/PFF2N60 REV. C, May 2004
Page 5 of 7
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