|
|
PDF STPSC1006D Data sheet ( Hoja de datos )
| Número de pieza | STPSC1006D | |
| Descripción | 600 V power Schottky silicon carbide diode | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STPSC1006D (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STPSC1006D
600 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC1006D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
10 A
600 V
175 °C
12 nC
May 2008
Rev 1
1/7
www.st.com
7
1 page  
STPSC1006D
2 Package information
Pacwkwawge.DiantafoShrmeeat4tiUo.cnom
● Epoxy meets UL94, V0
● Cooling method: C
● Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 6. TO-220AC Dimensions
Dimensions
Ref. Millimeters
Inches
H2
ØI
L2
F1
F
L5
L6
L9
L4
G
Min. Max.
A 4.40 4.60
A C 1.23 1.32
C D 2.40 2.72
E 0.49 0.70
L7
F 0.61 0.88
F1 1.14 1.70
G 4.95 5.15
D H2 10.00 10.40
L2 16.40 typ.
L4 13.00 14.00
M
E
L5 2.65 2.95
L6 15.25 15.75
L7 6.20 6.60
L9 3.50 3.93
M 2.6 typ.
Diam. I 3.75 3.85
Min. Max.
0.173 0.181
0.048 0.051
0.094 0.107
0.019 0.027
0.024 0.034
0.044 0.066
0.194 0.202
0.393 0.409
0.645 typ.
0.511 0.551
0.104 0.116
0.600 0.620
0.244 0.259
0.137 0.154
0.102 typ.
0.147 0.151
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STPSC1006D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STPSC1006 | Schottky Barrier 600 V power Schottky silicon carbide diode |  ST Microelectronics |
| STPSC1006D | 600 V power Schottky silicon carbide diode | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |