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PDF STPSC1006 Data sheet ( Hoja de datos )
| Número de pieza | STPSC1006 | |
| Descripción | Schottky Barrier 600 V power Schottky silicon carbide diode | |
| Fabricantes | ST Microelectronics | |
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Hay una vista previa y un enlace de descarga de STPSC1006 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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STPSC1006
600 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC1006D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
10 A
600 V
175 °C
12 nC
September 2009
Doc ID 16287 Rev 1
1/7
www.st.com
7
1 page  
STPSC1006
2 Package information
Pacwkwawge.DiantafoShrmeeat4tiUo.cnom
● Epoxy meets UL94, V0
● Cooling method: convection (C)
● Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TO-220AC Dimensions
Dimensions
Ref. Millimeters
Inches
Min. Max. Min. Max.
H2
ØI
L2
F1
F
L5
L6
L9
L4
G
A
C
L7
D
M
E
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
4.40 4.60
1.23 1.32
2.40 2.72
0.49 0.70
0.61 0.88
1.14 1.70
4.95 5.15
10.00 10.40
16.40 typ.
13.00 14.00
2.65 2.95
15.25 15.75
6.20 6.60
3.50 3.93
2.6 typ.
3.75 3.85
0.173 0.181
0.048 0.051
0.094 0.107
0.019 0.027
0.024 0.034
0.044 0.066
0.194 0.202
0.393 0.409
0.645 typ.
0.511 0.551
0.104 0.116
0.600 0.620
0.244 0.259
0.137 0.154
0.102 typ.
0.147 0.151
Doc ID 16287 Rev 1
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STPSC1006.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STPSC1006 | Schottky Barrier 600 V power Schottky silicon carbide diode | ST Microelectronics |
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