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Número de pieza | STPSC1206 | |
Descripción | Schottky Barrier 600 V power Schottky silicon carbide diode | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STPSC1206
600 V power Schottky silicon carbide diode
Features
■ No reverse recovery
■ Switching behavior independent of
temperature
■ Dedicated to PFC boost diode
Description
These diodes are manufactured using silicon
carbide substrate. This wide bandgap material
supports the manufacture of a Schottky diode
structure with a high voltage rating. Such diodes
exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of
the temperature.
Using these diodes will significantly reduce the
switching power losses of the associated MOS-
FET, and thus increase the efficiency of the
overall application. These diodes will then
outperform the power factor correction circuit
operating in hard switching conditions.
A
K
TO-220AC
STPSC1206D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
12 A
600 V
175 °C
12 nC
September 2009
Doc ID 16288 Rev 1
1/7
www.st.com
7
1 page STPSC1206
2 Package information
Pacwkwawge.DiantafoShrmeeat4tiUo.cnom
● Epoxy meets UL94, V0
● Colling method: convection (C)
● Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TO-220AC dimensions
Dimensions
Ref. Millimeters
Inches
Min. Max. Min. Max.
H2
ØI
L2
F1
F
L5
L6
L9
L4
G
A
C
L7
D
M
E
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
4.40 4.60
1.23 1.32
2.40 2.72
0.49 0.70
0.61 0.88
1.14 1.70
4.95 5.15
10.00 10.40
16.40 typ.
13.00 14.00
2.65 2.95
15.25 15.75
6.20 6.60
3.50 3.93
2.6 typ.
3.75 3.85
0.173 0.181
0.048 0.051
0.094 0.107
0.019 0.027
0.024 0.034
0.044 0.066
0.194 0.202
0.393 0.409
0.645 typ.
0.511 0.551
0.104 0.116
0.600 0.620
0.244 0.259
0.137 0.154
0.102 typ.
0.147 0.151
Doc ID 16288 Rev 1
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STPSC1206.PDF ] |
Número de pieza | Descripción | Fabricantes |
STPSC1206 | Schottky Barrier 600 V power Schottky silicon carbide diode | ST Microelectronics |
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