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STPSC806 데이터시트 PDF




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부품번호 STPSC806 기능
기능 Schottky Barrier 600 V power Schottky silicon carbide diode
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STPSC806 데이터시트, 핀배열, 회로
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STPSC806
600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC806D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
8A
600 V
175 °C
10 nC
September 2009
Doc ID 16286 Rev 1
1/7
www.st.com
7




STPSC806 pdf, 반도체, 판매, 대치품
Characteristics
www.DaStaTSPheSeCt48U0.c6om
Figure 5.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-05
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00 1.E+01
Figure 6.
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
IFSM(A)
1.E+03
1.E+02
1.E+01
Tc=25 °C
Tc=125 °C
1.E+00
1.E-05
1.E-04
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 7.
Total capacitive charges versus dIF/dt (typical values)
QC(nC)
16
14
IF=8A
VR=400 V
Tj=150 °C
12
10
8
6
4
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
4/7 Doc ID 16286 Rev 1

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STPSC806 전자부품, 판매, 대치품
STPSC806
www.DataSheet4U.com
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