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PDF BULT3P3 Data sheet ( Hoja de datos )

Número de pieza BULT3P3
Descripción Power Bipolar Medium voltage fast-switching NPN power transistor
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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BULT3P3
Medium voltage fast-switching PNP power transistor
Features
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Application
Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the BULT3N4, its
complementary NPN transistor.
SOT-32
1
2
3
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
BULT3P3
BULT3P3
September 2009
Package
SOT-32
Doc ID 16300 Rev 1
Packing
Tube
1/8
www.st.com
8

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BULT3P3 pdf
BULT3P3
3 Package mechanical data
Packagewmwwec.DhaatanSicheael td4Ua.tcaom
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 16300 Rev 1
5/8

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