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PDF PSMN013-100ES Data sheet ( Hoja de datos )
| Número de pieza | PSMN013-100ES | |
| Descripción | N-channel 100V 13.9mOhm Standard Level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN013-100ES
www.DataSheet4U.com
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Rev. 02 — 19 February 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 68 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 50 V;
see Figure 14 and 13
QG(tot) total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V;
see Figure 13 and 14
Min Typ Max Unit
- - 100 V
- - 68 A
- - 170 W
-55 -
175 °C
- - 127 mJ
- 17 - nC
- 59 - nC
1 page  
NXP Semiconductors
PSMN013-100ESwww.DataSheet4U.com
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10 and 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12 and 11
RG internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 13 and 14
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 13 and 14
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 13
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 13
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
Min Typ Max Unit
90 - - V
100 - - V
1- - V
234V
- - 4.8 V
- - 100 µA
-
0.06 2
µA
- 10 100 nA
- 10 100 nA
- 30 38.9 mΩ
- - 25 mΩ
- 11 13.9 mΩ
- 1- Ω
- 59 - nC
- 47.6 - nC
- 13.8 - nC
- 9.2 - nC
- 4.6 - nC
- 17 - nC
- 4.4 - V
- 3195 - pF
- 221 - pF
- 136 - pF
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
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NXP Semiconductors
PSMN013-100ESwww.DataSheet4U.com
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
PSMN013-100ES_2
Modifications:
20100219
Objective data sheet
• Various changes to content.
PSMN013-100ES_1
20090917
Objective data sheet
Change notice
-
-
Supersedes
PSMN013-100ES_1
-
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
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