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PDF NTMS4107N Data sheet ( Hoja de datos )
| Número de pieza | NTMS4107N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMS4107N
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Power MOSFET
30 V, 18 A, Single N−Channel, SO−8
Features
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
• Optimized for Low Side Synchronous Applications
• High Speed Switching Capability
Applications
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t v10 s
Steady
State
t v10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
$20
15
11
18
1.67
2.5
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
11 A
8.0
0.93 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, Tstg
56
−55 to
150
A
°C
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 30 V, VGS = 10 V, IPK = 42 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 3.0 A
EAS 880 mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
75 °C/W
Junction−to−Ambient − t v 10 s (Note 1)
RqJA
50
Junction−to−Ambient − Steady State (Note 2)
RqJA
135
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
3.4 mW @ 10 V
4.7 mW @ 4.5 V
ID MAX
18 A
D
G
S
8
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
Source
8
Drain
Drain
Source
Gate
Drain
Drain
(Top View)
4107N = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4107NR2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 1
1
Publication Order Number:
NTMS4107N/D
1 page  
NTMS4107N
PACKAGE DIMENSIONS
−X−
A
SO−8
CASE 751−07
ISSUE AE
B
−Y−
−Z−
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
J
SOLDERING FOOTPRINT
1.52
0.060
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NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
ǒ ǓSCALE 6:1
mm
inches
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMS4107N.PDF ] | |
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