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부품번호 | NTMS4935N 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NTMS4935N
Power MOSFET
30 V, 16 A, N−Channel, SO−8
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Points of Loads
• Power Load Switch
• Motor Controls
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
13
10.4
1.38
V
V
A
W
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 70°C
ID
10 A
8.0
Power Dissipation
(Note 2)
RqJA
TA = 25°C PD 0.81 W
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
16 A
12.7
Power Dissipation
Steady TA = 25°C
RqJA, t v 10 s(Note 1) State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 16 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PD 2.1 W
IDM 126 A
TTsJtg,
−55 to °C
150
IS 2.1 A
EAS 128 mJ
TL 260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
RqJA
91.9 °C/W
60.4
Junction−to−Foot (Drain)
RqJF
21.6
Junction−to−Ambient – Steady State (Note 2)
RqJA
154
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 0
1
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.1 mW @ 10 V
7.0 mW @ 4.5 V
ID MAX
16 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4935N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4935NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4935N/D
NTMS4935N
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
TYPICAL PERFORMANCE CURVES
www.DataSheet4U.com
TJ = 25°C
Ciss VGS = 0 V
Coss
Crss
5 10 15 20 25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
10
9 QT
8
7 VGS
6
5
4 QGS QGD
3
2 VGS = 10 V
1
0
ID = 7.5 A
TJ = 25°C
0 5 10 15 20 25 30 35 40 45 50 55 60
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
100
VDD = 15 V
ID = 1 A
VGS = 10 V
10
td(off)
tf
td(on)
tr
2
VGS = 0 V
TJ = 25°C
1.5
1
0.5
11 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0
0.5 0.55 0.6 0.65 0.7 0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
10 100 ms
1 VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1 RDS(on) LIMIT
THERMAL LIMIT
1 ms
10 ms
dc
0.01
0.01
PACKAGE LIMIT
0.1 1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
130
120
110
100
90
80
70
60
50
40
30
20
10
0
25
ID = 16 A
50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTMS4935N | Power MOSFET ( Transistor ) | ON Semiconductor |
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