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Datasheet 201KD10JX Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 201KD10JX | 11 to 1000 Volts Varistor 2.6 to 247 Joule
MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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182KD10JX* thru 180LD10JX*
11 to 1000 Volts Varistor 2.6 to 247Joule
Features
• • • • • High Surge, High Energy De |  Micro Commercial Components | varistor |
201 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2010 | Double Sided Chip Resistor RDeosiustbolres-Sided DCohuipbleR-eSsidisetdorCship Resistors
Welwyn Components
DDSSCCSeSrieersies
TTwwoopparaarlalelllerelsriestsainstcaenecleemeelnetms einnatssingle chip
Einxceallseinntgpluelscehwipithstand performance
LEaxsceer ltlreimntmpeudlusep two i0t.h5s%tatonlderpanecreformance
 TT electronics data | | |
| 2 | 2010DN | FYP2010DN
FYP2010DN
FYP2010DN
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection
Applications
• Switched mode power supply • Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRI  Fairchild Semiconductor data | | |
| 3 | 2012E | Tuning Fork SMD Quartz Crystal YIC data | | |
| 4 | 2012ES | Tuning Fork SMD Quartz Crystal YIC data | | |
| 5 | 2015 | Single P-Channel Power MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excelle  Tuofeng Semiconductor mosfet | | |
| 6 | 2015M | MICROWAVEBIPOLAR ETC data | | |
| 7 | 2016 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
2016
N-Channel Enhancement Mode Field Effect Transistor
General Description
The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for us Tuofeng Semiconductor transistor | |
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| Número de pieza | Descripción | Fabricantes | |
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