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PDF MMBTSA1979 Data sheet ( Hoja de datos )

Número de pieza MMBTSA1979
Descripción Silicon Epitaxial Planar Transistor
Fabricantes SEMTECH ELECTRONICS 
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MMBTSA1979
PNP Silicon Epitaxial Planar Transistor
For medium power amplifier applications
The transistor is subdivided into two groups,
O and Y according to its DC current gain.
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
SOT-23 Plastic Package
Value
40
32
5
500
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Cutoff Current
at -VCB = 40 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Transition Frequency
at -VCE = 6 V, -IC = 20 mA
Collector Output Capacitance
at -VCB = 6 V, f = 1 MHz
Symbol
O hFE
Y hFE
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
fT
Cob
Min.
70
120
40
32
5
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
200
7.5
Max.
140
240
-
-
-
0.1
0.1
0.25
-
-
Unit
-
-
V
V
V
µA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/08/2006

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